Two subsets of stem-like CD8+ memory T cell progenitors with distinct fate commitments in humans

T cell memory relies on the generation of antigen-specific progenitors with stem-like properties. However, the identity of these progenitors has remained unclear, precluding a full understanding of the differentiation trajectories that underpin the heterogeneity of antigen-experienced T cells. We used a systematic approach guided by single-cell RNA-sequencing data to map the organizational structure of the human CD8+ memory T cell pool under physiological conditions. We identified two previously unrecognized subsets of clonally, epigenetically, functionally, phenotypically and transcriptionally distinct stem-like CD8+ memory T cells. Progenitors lacking the inhibitory receptors programmed death-1 (PD-1) and T cell immunoreceptor with Ig and ITIM domains (TIGIT) were committed to a functional lineage, whereas progenitors expressing PD-1 and TIGIT were committed to a dysfunctional, exhausted-like lineage. Collectively, these data reveal the existence of parallel differentiation programs in the human CD8+ memory T cell pool, with potentially broad implications for the development of immunotherapies and vaccines

Progress in indium gallium nitride materials for solar photovoltaic energy conversion

The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic (PV) technology, which converts sunlight directly into electricity, is an enormously promising solution to our energy challenges. This promise increases as the efficiencies are improved. One straightforward method of increasing PV device efficiency is to utilize multi-junction cells, each of which is responsible for absorbing a different range of wavelengths in the solar spectrum. Indium gallium nitride (In x Ga1-x N) has a variable band gap from 0.7 to 3.4 eV that covers nearly the whole solar spectrum. In addition, In x Ga1-x N can be viewed as an ideal candidate PV material for both this potential band gap engineering and microstructural engineering in nanocolumns that offer optical enhancement. It is clear that In x Ga1-x N is an extremely versatile potential PV material that enables several known photovoltaic device configurations and multi-junctions with theoretic efficiencies over 50 pct. This potential is driving immense scientific interest in the material system. This paper reviews the solar PV technology field and the basic properties of In x Ga1-x N materials and PV devices. The challenges that remain in realizing a high-efficiency In x Ga1-x N PV device are summarized along with paths for future work. Finally, conclusions are drawn about the potential for In x Ga1-x N photovoltaic technology in the future. © 2013 The Minerals, Metals & Materials Society and ASM International