Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed

Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was obtained that a short-term influence of field initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. General regularities in behavior of the luminescence intensity have been found. This intensity changes with the concentration of recombination centers. A possible mechanism of observed transformations has been discussed

Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation

Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable – time to a random event – obeys the Weibull–Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented

Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented

Defect reorganization induced by pulsed magnetic field in porous InP

We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination within the range 0.6 to 2.0 µm at 77 K. It was obtained that field influence initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. A possible mechanism of observed transformation is discussed

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [VAs+impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed

Porous nanostructured InP: technology, properties, application

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates

Cyclotron radiation of semiconductor crystals

We obtained relations for estimating the power of cyclotron radiation of semiconductor crystals, when the plasma of thermal carriers is not in a state of thermodynamic equilibrium. It has been shown that the radiation power is a power function of the magnetic field induction. The theoretical calculations are in good agreement with the experimental results