25 research outputs found
Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors
A theory for longitudinal (T1) and transverse (T2) electron spin coherence
times in zincblende semiconductor quantum wells is developed based on a
non-perturbative nanostructure model solved in a fourteen-band restricted basis
set. Distinctly different dependences of coherence times on mobility,
quantization energy, and temperature are found from previous calculations.
Quantitative agreement between our calculations and measurements is found for
GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure
Intersubband spin-density excitations in quantum wells with Rashba spin splitting
In inversion-asymmetric semiconductors, spin-orbit coupling induces a
k-dependent spin splitting of valence and conduction bands, which is a
well-known cause for spin decoherence in bulk and heterostructures.
Manipulating nonequilibrium spin coherence in device applications thus requires
understanding how valence and conduction band spin splitting affects carrier
spin dynamics. This paper studies the relevance of this decoherence mechanism
for collective intersubband spin-density excitations (SDEs) in quantum wells. A
density-functional formalism for the linear spin-density matrix response is
presented that describes SDEs in the conduction band of quantum wells with
subbands that may be non-parabolic and spin-split due to bulk or structural
inversion asymmetry (Rashba effect). As an example, we consider a 40 nm
GaAs/AlGaAs quantum well, including Rashba spin splitting of the conduction
subbands. We find a coupling and wavevector-dependent splitting of the
longitudinal and transverse SDEs. However, decoherence of the SDEs is not
determined by subband spin splitting, due to collective effects arising from
dynamical exchange and correlation.Comment: 10 pages, 4 figure
Molecular spintronics: Coherent spin transfer in coupled quantum dots
Time-resolved Faraday rotation has recently demonstrated coherent transfer of
electron spin between quantum dots coupled by conjugated molecules. Using a
transfer Hamiltonian ansatz for the coupled quantum dots, we calculate the
Faraday rotation signal as a function of the probe frequency in a pump-probe
setup using neutral quantum dots. Additionally, we study the signal of one
spin-polarized excess electron in the coupled dots. We show that, in both
cases, the Faraday rotation angle is determined by the spin transfer
probabilities and the Heisenberg spin exchange energy. By comparison of our
results with experimental data, we find that the transfer matrix element for
electrons in the conduction band is of order 0.08 eV and the spin transfer
probabilities are of order 10%.Comment: 13 pages, 6 figures; minor change
Spin relaxation in (110) and (001) InAs/GaSb superlattices
We report an enhancement of the electron spin relaxation time (T1) in a (110)
InAs/GaSb superlattice by more than an order of magnitude (25 times) relative
to the corresponding (001) structure. The spin dynamics were measured using
polarization sensitive pump probe techniques and a mid-infrared, subpicosecond
PPLN OPO. Longer T1 times in (110) superlattices are attributed to the
suppression of the native interface asymmetry and bulk inversion asymmetry
contributions to the precessional D'yakonov Perel spin relaxation process.
Calculations using a nonperturbative 14-band nanostructure model give good
agreement with experiment and indicate that possible structural inversion
asymmetry contributions to T1 associated with compositional mixing at the
superlattice interfaces may limit the observed spin lifetime in (110)
superlattices. Our findings have implications for potential spintronics
applications using InAs/GaSb heterostructures.Comment: 4 pages, 2 figure
Modelling spin relaxation in semiconductor quantum wells: modifying the Elliot process
A model of the Elliot process for spin relaxation is developed that explicitly incorporates the Dresselhaus spin-splitting of the conduction band in semiconductors lacking an inversion symmetry. It is found that this model reduces to existing models in bulk if the scattering matrices are constructed from a superposition of eigenstates. It is shown that the amplitude for intra-subband spin relaxation disappears in quantum wells on the basis of existing models. However, an amplitude due to the Dresselhaus spin-splitting remains, becoming increasingly important as the well becomes narrower. It is also shown that this component does not disappear for scattering between spin states at the same wavevector. It is concluded that for quantum wells and lower dimensional semiconductors that this modified model should be used in analysis of the spin dynamics
Ensemble interactions in strained semiconductor quantum dots
Large variations in InxGa1-xAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs [001] substrates with different surface step densities. It was found that decreasing dot-dot separation blueshifts all levels, narrows intersublevel transition energies, shortens luminescence decay times for excited states, and increases inhomogeneous photoluminescence broadening. These changes in optical properties are attributed to a progressive strain deformation of the confining potentials and to the increasing effects of positional disorder in denser dot ensembles
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
Observations of exciton and carrier spin relaxation in Be doped p-type GaAs
<span lang="EN-US" new="" style="font-family: ;" times=""><font color="#000000">We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3-3.1 ns at 10-100K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10-77K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism. (C) 2014 AIP Publishing LLC.</font></span
Temperature dependence of spin relaxation time in InAs columnar quantum dots at 10 to 150K
We have investigated carrier spin relaxation in InAs columnar quantum dots (CQDs) using time-resolved photoluminescence measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxations of the 3- and 35-period SL CQDs show double exponential decay up to 50 and 130 K, respectively. The spin relaxation times of the fast component, whose amplitudes are 4-11 times larger than that of the slow component, are around 100 ps for the two samples. For the 3-period SL CQDs, the fast spin relaxation time shows no temperature dependence up to around 50 K, indicating the relevance of the Bir-Aronov-Pikus process. The slow spin relaxation time of the 35-period SL CQDs was found to decrease from 3.42 ns at 10 K to 0.849 ns at 130 K. This large change may be explained by the Elliott-Yafet process considering acoustic phonon scattering. (C) 2012 The Japan Society of Applied Physic