Spectroscopic ellipsometry as a sensitive monitor of materials contamination

Spectroscopic ellipsometry is demonstrated to be extremely sensitive to contamination layers in the thickness range from 0.1 nm to 10 microns. In the present experiments we deposit either a thin lubricating oil (WD-40) or mineral oil continuously onto Ir, Cu, Al, Au, and V substrates from a bubbler, and monitor its thickness growth from sub-nanometer to tens of nanometers as a function of time. Re-evaporation of contaminant oils is also monitored in real-time by ellipsometry

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Strain-balanced InAs/InAsSb superlattices offer access to the mid- to long-wavelength infrared region with what is essentially a ternary material system at the GaSb lattice constant. The absorption coefficients of InAs/InAsSb superlattices grown by molecular beam epitaxy on (100)-oriented GaSb substrates are measured at room temperature over the 30 to 800 meV photon energy range using spectroscopic ellipsometry, and the miniband structure of each superlattice is calculated using a Kronig-Penney model. The InAs/InAsSb conduction band offset is used as a fitting parameter to align the calculated superlattice ground state transition energy to the measured absorption onset at room temperature and to the photoluminescence peak energy at low temperature. It is observed that the ground state absorption coefficient and transition strength are proportional to the square of the wavefunction overlap and the ground state absorption coefficient approaches a maximum value of around 5780 cm-1as the wavefunction overlap approaches 100%. The absorption analysis of these samples indicates that the optical joint density of states is weakly dependent on the period thickness and Sb content of the superlattice, and that wavefunction overlap is the principal design parameter in terms of obtaining strong absorption in these structures

LEO degradation of graphite and carbon-based composites aboard Space Shuttle Flight STS-46

Six different types of carbon and carbon-boron nitride composites were exposed to low Earth orbit aboard Space Shuttle flight STS-46. The samples received a nominal atomic oxygen fluence of 2.2 x 10(exp 20) atoms/sq cm in 42 hours of exposure. Pyrolytic graphite and highly oriented pyrolytic graphite showed significant degradation, and the measured erosion yield was within a factor of two of published values. The erosion yield of pyrolytic boron nitride was found to be 2.6 x 10(exp 26) cu cm/atom in plasma asher exposure, over 42 times lower than that of pyrolytic graphite. This low erosion yield makes graphite plus boron nitride mixtures quite resistant to low Earth orbit exposure. Evidence suggests that the graphitic component was preferentially etched, leaving the surface boron nitride rich. Degradation resistance increases with boron nitride composition. Carbon fiber/carbon composites degraded in low Earth orbit, and the carbon pitch binder was found to etch more easily than the graphite fibers which have much higher degradation resistance

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Strain-balanced InAs/InAsSb superlattices offer access to the mid- to long-wavelength infrared region with what is essentially a ternary material system at the GaSb lattice constant. The absorption coefficients of InAs/InAsSb superlattices grown by molecular beam epitaxy on (100)-oriented GaSb substrates are measured at room temperature over the 30 to 800 meV photon energy range using spectroscopic ellipsometry, and the miniband structure of each superlattice is calculated using a Kronig-Penney model. The InAs/InAsSb conduction band offset is used as a fitting parameter to align the calculated superlattice ground state transition energy to the measured absorption onset at room temperature and to the photoluminescence peak energy at low temperature. It is observed that the ground state absorption coefficient and transition strength are proportional to the square of the wavefunction overlap and the ground state absorption coefficient approaches a maximum value of around 5780 cm-1as the wavefunction overlap approaches 100%. The absorption analysis of these samples indicates that the optical joint density of states is weakly dependent on the period thickness and Sb content of the superlattice, and that wavefunction overlap is the principal design parameter in terms of obtaining strong absorption in these structures

Oxygen plasma asher contamination: An analysis of sources and remedies

The low Earth orbit (LEO) environment is commonly simulated using oxygen plasma ashers to determine the effects of LEO on spacecraft materials. However, plasma ashers can also contaminate samples during plasma exposure, making them less than ideal for space simulation. This study results from attempts to minimize or eliminate contamination. Optical methods of variable angle spectroscopic ellipsometry and reflectance spectrophotometry were used to quantify contaminant stoichiometry and deposition rate. Auger electron spectroscopy identified deposited contaminants and their surface coverage. Contamination results from etching of the rubber chamber seals by the plasma. The deposited contaminant was nearly indistinguishable from fully stoichiometric SiO2. Contaminant deposition rates up to 0.27 nm/min have been observed, and these layers effectively passivate the surface by depositing an overcoat of SiOx . Placing metal into the path of the plasma before it can reach the chamber seals greatly reduces contamination. A newly designed chamber confines the plasma to a small volume away from the chamber seals. For fluences as high as 3.531022 atoms/cm2, equivalent to 7.5 years of space exposure for the International Space Station, the redesigned asher showed less than one monolayer of deposited contaminant

Measurement of Damage Profiles from Solar Wind Implantation

NASA's Genesis Mission launched from Cape Canaveral in August of 2001 with the goal of collecting solar wind in ultra-pure materials. The samples were returned to Earth more than three years later for subsequent analysis. Although the solar wind is comprised primarily of protons, it also contains ionized species representing the entire periodic table. The Genesis mission took advantage of the natural momentum of these ionized species to implant themselves in specialized collectors including single crystal Si and SiC. The collectors trapped the solar wind species of interest and sustained significant damage to the surface crystal structure as a result of the ion bombardment. In this work, spectroscopic ellipsometry has been used to evaluate the extent of this damage in Si and SiC samples. These results and models are compared for artificially implanted samples and pristine non-flight material. In addition, the flown samples had accumulated a thin film of molecular contamination as a result of outgassing in flight, and we demonstrate that this layer can be differentiated from the material damage. In addition to collecting bulk solar wind samples (continuous exposure), the Genesis mission actually returned silicon exposed to four different solar wind regimes: bulk, high speed, low speed, and coronal mass ejections. Each of these solar wind regimes varies in energy, but may vary in composition as well. While determining the composition is a primary goal of the mission, we are also interested in the variation in depth and extent of the damage layer as a function of solar wind regime. Here, we examine flight Si from the bulk solar wind regime and compare the results to both pristine and artificially implanted Si. Finally, there were four samples which were mounted in an electrostatic "concentrator" designed to reject a large fraction (>85%) of incoming protons while enhancing the concentration of ions mass 4-28 amu by a factor of at least 20. Two of these samples were single crystal 6H silicon carbide. (The others were polycrystalline CVD diamond and amorphous carbon that were not examined in the work.) The ion damaged SiC samples from the concentrator were studied in comparison to the flight Si from the bulk array to understand differences in the extent of the damage

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

The structural and optical properties of lattice-matched InAs0.911Sb0.089 bulk layers and strainbalanced InAs/InAs1-xSbx (x~0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffraction, spectroscopic ellipsometry, and temperature dependent photoluminescence spectroscopy. The photoluminescence and ellipsometry measurements determine the ground state bandgap energy and the X-ray diffraction measurements determine the layer thickness and mole fraction of the structures studied. Detailed modeling of the X-ray diffraction data is employed to quantify unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattices. A Kronig-Penney model of the superlattice miniband structure is used to analyze the valence band offset between InAs and InAsSb, and hence the InAsSb band edge positions at each mole fraction. The resulting composition dependence of the bandgap energy and band edge positions of InAsSb are described using the bandgap bowing model; the respective low and room temperature bowing parameters for bulk InAsSb are 938 and 750 meV for the bandgap, 558 and 383 meV for the conduction band, and -380 and -367 meV for the valence band