Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered InxGa1−xAs pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally “pure” InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations where the abrupt heterointerfaces are replaced by a spatially inhomogeneous composition profile x. Structural relaxation and the strain field calculations are performed through the Keating valence force field model, while the electronic and optical properties are determined within the empirical tight-binding approach. We analyze the relative impact of two different aspects of the chemical disorder, namely: (i) the effect of the strain relief inside the QD, and (ii) the purely chemical effect due to the group-III atomic species interdiffusion. We find that these effects may be quantitatively comparable, significantly affecting the electronic and optical properties of the dot. Our results are discussed in comparison with recent luminescence studies of intermixed QDs

Symmetric Periodic Solutions of the Anisotropic Manev Problem

We consider the Manev Potential in an anisotropic space, i.e., such that the force acts differently in each direction. Using a generalization of the Poincare' continuation method we study the existence of periodic solutions for weak anisotropy. In particular we find that the symmetric periodic orbits of the Manev system are perturbed to periodic orbits in the anisotropic problem.Comment: Late

Rosette Central Configurations, Degenerate central configurations and bifurcations

In this paper we find a class of new degenerate central configurations and bifurcations in the Newtonian $n$-body problem. In particular we analyze the Rosette central configurations, namely a coplanar configuration where $n$ particles of mass $m_1$ lie at the vertices of a regular $n$-gon, $n$ particles of mass $m_2$ lie at the vertices of another $n$-gon concentric with the first, but rotated of an angle $\pi/n$, and an additional particle of mass $m_0$ lies at the center of mass of the system. This system admits two mass parameters $\mu=m_0/m_1$ and \ep=m_2/m_1. We show that, as $\mu$ varies, if $n> 3$, there is a degenerate central configuration and a bifurcation for every \ep>0, while if $n=3$ there is a bifurcations only for some values of $\epsilon$.Comment: 16 pages, 6 figure

Linear stability of the Lagrangian triangle solutions for quasihomogeneous potentials

In this paper we study the linear stability of the relative equilibria for homogeneous and quasihomogeneous potentials. Firstly, in the case the potential is a homogeneous function of degree $-a$, we find that any relative equilibrium of the $n$-body problem with $a>2$ is spectrally unstable. We also find a similar condition in the quasihomogeneous case. Then we consider the case of three bodies and we study the stability of the equilateral triangle relative equilibria. In the case of homogeneous potentials we recover the classical result obtained by Routh in a simpler way. In the case of quasihomogeneous potentials we find a generalization of Routh inequality and we show that, for certain values of the masses, the stability of the relative equilibria depends on the size of the configuration.Comment: 21 pages 4 figure

Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

We present an atomistic investigation of the influence of strain on the electronic properties of quantum dots (QD's) within the empirical $s p^{3} s^{*}$ tight-binding (ETB) model with interactions up to 2nd nearest neighbors and spin-orbit coupling. Results for the model system of capped pyramid-shaped InAs QD's in GaAs, with supercells containing $10^{5}$ atoms are presented and compared with previous empirical pseudopotential results. The good agreement shows that ETB is a reliable alternative for an atomistic treatment. The strain is incorporated through the atomistic valence force field model. The ETB treatment allows for the effects of bond length and bond angle deviations from the ideal InAs and GaAs zincblende structure to be selectively removed from the electronic-structure calculation, giving quantitative information on the importance of strain effects on the bound state energies and on the physical origin of the spatial elongation of the wave functions. Effects of dot-dot coupling have also been examined to determine the relative weight of both strain field and wave function overlap.Comment: 22 pages, 7 figures, submitted to Phys. Rev. B (in press) In the latest version, added Figs. 3 and 4, modified Fig. 5, Tables I and II,.and added new reference

Multiband tight-binding theory of disordered ABC semiconductor quantum dots: Application to the optical properties of alloyed CdZnSe nanocrystals

Zero-dimensional nanocrystals, as obtained by chemical synthesis, offer a broad range of applications, as their spectrum and thus their excitation gap can be tailored by variation of their size. Additionally, nanocrystals of the type ABC can be realized by alloying of two pure compound semiconductor materials AC and BC, which allows for a continuous tuning of their absorption and emission spectrum with the concentration x. We use the single-particle energies and wave functions calculated from a multiband sp^3 empirical tight-binding model in combination with the configuration interaction scheme to calculate the optical properties of CdZnSe nanocrystals with a spherical shape. In contrast to common mean-field approaches like the virtual crystal approximation (VCA), we treat the disorder on a microscopic level by taking into account a finite number of realizations for each size and concentration. We then compare the results for the optical properties with recent experimental data and calculate the optical bowing coefficient for further sizes