388 research outputs found
A regional ocean circulation model for the mid-Cretaceous North Atlantic Basin: implications for black shale formation
High concentrations of organic matter accumulated in marine sediments during Oceanic Anoxic Events (OAEs) in the Cretaceous. Model studies examining these events invariably make use of global ocean circulation models. In this study, a regional model for the North Atlantic Basin during OAE2 at the Cenomanian-Turonian boundary has been developed. A first order check of the results has been performed by comparison with the results of a recent global Cenomanian CCSM3 run, from which boundary and initial conditions were obtained. The regional model is able to maintain tracer patterns and to produce velocity patterns similar to the global model. The sensitivity of the basin tracer and circulation patterns to changes in the geometry of the connections with the global ocean is examined with three experiments with different bathymetries near the sponges. Different geometries turn out to have little effect on tracer distribution, but do affect circulation and upwelling patterns. The regional model is also used to test the hypothesis that ocean circulation may have been behind the deposition of black shales during OAEs. Three scenarios are tested which are thought to represent pre-OAE, OAE and post-OAE situations. Model results confirm that Pacific intermediate inflow together with coastal upwelling could have enhanced primary production during OAE2. A low sea level in the pre-OAE scenario could have inhibited large scale black shale formation, as could have the opening of the Equatorial Atlantic Seaway in the post-OAE scenario
Anxiety Detection Leveraging Mobile Passive Sensing
Anxiety disorders are the most common class of psychiatric problems affecting
both children and adults. However, tools to effectively monitor and manage
anxiety are lacking, and comparatively limited research has been applied to
addressing the unique challenges around anxiety. Leveraging passive and
unobtrusive data collection from smartphones could be a viable alternative to
classical methods, allowing for real-time mental health surveillance and
disease management. This paper presents eWellness, an experimental mobile
application designed to track a full-suite of sensor and user-log data off an
individual's device in a continuous and passive manner. We report on an initial
pilot study tracking ten people over the course of a month that showed a nearly
76% success rate at predicting daily anxiety and depression levels based solely
on the passively monitored features
Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET
This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions
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The Status of Thermophotovoltaic Energy Conversion Technology at Lockheed Martin Corporation
In a thermophotovoltaic (TPV) energy conversion system, a heated surface radiates in the mid-infrared range onto photocells which are sensitive at these energies. Part of the absorbed energy is converted into electric output. Conversion efficiency is maximized by reducing the absorption of non-convertible energy with some form of spectral control. In a TPV system, many technology options exist. Our development efforts have concentrated on flat-plate geometries with greybody radiators, front surface tandem filters and a multi-chip module (MCM) approach that allows selective fabrication processes to match cell performance. Recently, we discontinued development of GaInAsSb quaternary cell semiconductor material in favor of ternary GaInAs material. In our last publication (Ref. 1), the authors reported conversion efficiencies of about 20% (radiator 950 C, cells 22 C) for small modules (1-4 cm{sup 2}) tested in a prototypic cavity test environment. Recently, we have achieved measured conversion efficiencies of about 12.5% in larger ({approx}100 cm{sup 2}) test arrays. The efficiency reduction in the larger arrays was probably due to quality and variation of the cells as well as non-uniform illumination from the hot radiator to the cold plate. Modules in these tests used GaInAsSb cells with 0.52 eV bandgap and front surface filters for spectral control. This paper provides details of the individual system components and the rationale for our technical decisions. It also describes the measurement techniques used to record these efficiencies
Evaluation of LLNL's Nuclear Accident Dosimeters at the CALIBAN Reactor September 2010
The Lawrence Livermore National Laboratory uses neutron activation elements in a Panasonic TLD holder as a personnel nuclear accident dosimeter (PNAD). The LLNL PNAD has periodically been tested using a Cf-252 neutron source, however until 2009, it was more than 25 years since the PNAD has been tested against a source of neutrons that arise from a reactor generated neutron spectrum that simulates a criticality. In October 2009, LLNL participated in an intercomparison of nuclear accident dosimeters at the CEA Valduc Silene reactor (Hickman, et.al. 2010). In September 2010, LLNL participated in a second intercomparison of nuclear accident dosimeters at CEA Valduc. The reactor generated neutron irradiations for the 2010 exercise were performed at the Caliban reactor. The Caliban results are described in this report. The procedure for measuring the nuclear accident dosimeters in the event of an accident has a solid foundation based on many experimental results and comparisons. The entire process, from receiving the activated NADs to collecting and storing them after counting was executed successfully in a field based operation. Under normal conditions at LLNL, detectors are ready and available 24/7 to perform the necessary measurement of nuclear accident components. Likewise LLNL maintains processing laboratories that are separated from the areas where measurements occur, but contained within the same facility for easy movement from processing area to measurement area. In the event of a loss of LLNL permanent facilities, the Caliban and previous Silene exercises have demonstrated that LLNL can establish field operations that will very good nuclear accident dosimetry results. There are still several aspects of LLNL's nuclear accident dosimetry program that have not been tested or confirmed. For instance, LLNL's method for using of biological samples (blood and hair) has not been verified since the method was first developed in the 1980's. Because LLNL and the other DOE participants were limited in what they were allowed to do at the Caliban and Silene exercises and testing of various elements of the nuclear accident dosimetry programs cannot always be performed as guests at other sites, it has become evident that DOE needs its own capability to test nuclear accident dosimeters. Angular dependence determination and correction factors for NADs desperately need testing as well as more evaluation regarding the correct determination of gamma doses. It will be critical to properly design any testing facility so that the necessary experiments can be performed by DOE laboratories as well as guest laboratories. Alternate methods of dose assessment such as using various metals commonly found in pockets and clothing have yet to be evaluated. The DOE is planning to utilize the Godiva or Flattop reactor for testing nuclear accident dosimeters. LLNL has been assigned the primary operational authority for such testing. Proper testing of nuclear accident dosimeters will require highly specific characterization of the pulse fields. Just as important as the characterization of the pulsed fields will be the design of facilities used to process the NADs. Appropriate facilities will be needed to allow for early access to dosimeters to test and develop quick sorting techniques. These facilities will need appropriate laboratory preparation space and an area for measurements. Finally, such a facility will allow greater numbers of LLNL and DOE laboratory personnel to train on the processing and interpretation of nuclear accident dosimeters and results. Until this facility is fully operational for test purposes, DOE laboratories may need to continue periodic testing as guests of other reactor facilities such as Silene and Caliban
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The Status of Thermophotovoltaic Energy Conversion Technology at Lockheed Martin Corp.
In a thermophotovoltaic (TPV) energy conversion system, a heated surface radiates in the mid-infrared range onto photodiodes which are sensitive at these energies. Part of the absorbed energy is converted into electric output. Conversion efficiency is maximized by reducing the absorption of non-convertible energy with some form of spectral control. In a TPV system, many technology options exist. The development efforts have concentrated on flat-plate geometries with greybody radiators, low bandgap quaternary diodes, front surface tandem filters and a multi-chip module (MCM) approach that allows selective fabrication processes to match diode performance. Recently, the authors achieved conversion efficiencies of about 20% (radiator 950 C, diodes 22 C) for a module in a prototypic cavity test environment. These tests employed InGaAsSb diodes with 0.52 eV bandgap and front surface filters for spectral control. This paper provides details of the individual system components and describes the measurement technique used to record these efficiencies
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Quaternary InGaAsSb Thermophotovoltaic Diode Technology
Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design
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0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures
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