Intrinsic carrier mobility of multi-layered MoS2_2 field-effect transistors on SiO2_2

By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $\mu$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.Comment: 8 pages, 5 figures, typos fixed, and references update

Effects of etchants in the transfer of chemical vapor deposited graphene

The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration

Identification of Electron Donor States in N-doped Carbon Nanotubes

Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states near the Fermi level. Using tight-binding and ab initio calculations, we observe that pyridine-like N structures are responsible for the metallic behavior and the prominent features near the Fermi level. These electron rich structures are the first example of n-type nanotubes, which could pave the way to real molecular hetero-junction devices.Comment: 5 pages, 4 figures, revtex, submitted to PR

Spontaneous alloying in binary metal microclusters - A molecular dynamics study -

Microcanonical molecular dynamics study of the spontaneous alloying(SA), which is a manifestation of fast atomic diffusion in a nano-sized metal cluster, is done in terms of a simple two dimensional binary Morse model. Important features observed by Yasuda and Mori are well reproduced in our simulation. The temperature dependence and size dependence of the SA phenomena are extensively explored by examining long time dynamics. The dominant role of negative heat of solution in completing the SA is also discussed. We point out that a presence of melting surface induces the diffusion of core atoms even if they are solid-like. In other words, the {\it surface melting} at substantially low temperature plays a key role in attaining the SA.Comment: 15 pages, 12 fgures, Submitted to Phys.Rev.

Size Effects in Carbon Nanotubes

The inter-shell spacing of multi-walled carbon nanotubes was determined by analyzing the high resolution transmission electron microscopy images of these nanotubes. For the nanotubes that were studied, the inter-shell spacing ${\hat{d}_{002}}$ is found to range from 0.34 to 0.39 nm, increasing with decreasing tube diameter. A model based on the results from real space image analysis is used to explain the variation in inter-shell spacings obtained from reciprocal space periodicity analysis. The increase in inter-shell spacing with decreased nanotube diameter is attributed to the high curvature, resulting in an increased repulsive force, associated with the decreased diameter of the nanotube shells.Comment: 4 pages. RevTeX. 4 figure

Growth of carbon nanotubes on quasicrystalline alloys

We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also been made between tubes grown on various quasicrystalline and SiO2 substrates. While a significant MWNT growth was observed on decagonal quasicrystalline substrate, there was no significant growth observed on icosahedral quasicrystalline substrate. Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) results show high crystalline nature of the nanotubes. Presence of continuous iron filled core in the nanotubes grown on these substrates was also observed, which is typically not seen in MWNTs grown using similar process on silicon and/or silicon dioxide substrates. The study has important implications for understanding the growth mechanism of MWNTs on conducting substrates which have potential applications as heat sinks

Bundling up carbon nanotubes through Wigner defects

We show, using ab initio total energy density functional theory, that the so-called Wigner defects, an interstitial carbon atom right besides a vacancy, which are present in irradiated graphite can also exist in bundles of carbon nanotubes. Due to the geometrical structure of a nanotube, however, this defect has a rather low formation energy, lower than the vacancy itself, suggesting that it may be one of the most important defects that are created after electron or ion irradiation. Moreover, they form a strong link between the nanotubes in bundles, increasing their shear modulus by a sizeable amount, clearly indicating its importance for the mechanical properties of nanotube bundles.Comment: 5 pages and 4 figure