3,248 research outputs found
Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
Telegraph noise, which originates from the switching of charge between
meta-stable trapping sites, becomes increasingly important as device sizes
approach the nano-scale. For charge-based quantum computing, this noise may
lead to decoherence and loss of read out fidelity. Here we use a radio
frequency single electron transistor (rf-SET) to probe the telegraph noise
present in a typical semiconductor-based quantum computer architecture. We
frequently observe micro-second telegraph noise, which is a strong function of
the local electrostatic potential defined by surface gate biases. We present a
method for studying telegraph noise using the rf-SET and show results for a
charge trap in which the capture and emission of a single electron is
controlled by the bias applied to a surface gate.Comment: Accepted for publication in Journal of Applied Physics. Comments
always welcome, email [email protected], [email protected]
A treatment of the Zeeman effect using Stokes formalism and its implementation in the Atmospheric Radiative Transfer Simulator (ARTS)
This paper presents the practical theory that was used to implement the Zeeman effect using Stokes formalism in the Atmospheric Radiative Transfer Simulator (ARTS). ARTS now treats the Zeeman effect in a general manner for several gas species for all polarizations and takes into account variations in both magnetic and atmospheric fields along a full 3D geometry. We present how Zeeman splitting affects polarization in radiative transfer simulations and find that the effect may be large in Earth settings for polarized receivers in limb observing geometry. We find that not taking a spatially varying magnetic field into account can result in absolute errors in the measurement vector of at least 10K in Earth magnetic field settings. The paper also presents qualitative tests for O2 lines against previous models (61.15GHz line) and satellite data from Odin-SMR (487.25GHz line), and the overall consistency between previous models, satellite data, and the new ARTS Zeeman module seems encouraging
End-of-fabrication CMOS process monitor
A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's)
Charge sensing in carbon nanotube quantum dots on microsecond timescales
We report fast, simultaneous charge sensing and transport measurements of
gate-defined carbon nanotube quantum dots. Aluminum radio frequency single
electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide
single-electron charge sensing on microsecond timescales. Simultaneously, rf
reflectometry allows fast measurement of transport through the nanotube dot.
Charge stability diagrams for the nanotube dot in the Coulomb blockade regime
show extended Coulomb diamonds into the high-bias regime, as well as even-odd
filling effects, revealed in charge sensing data.Comment: 4 pages, 4 figure
Radio-frequency operation of a double-island single-electron transistor
We present results on a double-island single-electron transistor (DISET)
operated at radio-frequency (rf) for fast and highly sensitive detection of
charge motion in the solid state. Using an intuitive definition for the charge
sensitivity, we compare a DISET to a conventional single-electron transistor
(SET). We find that a DISET can be more sensitive than a SET for identical,
minimum device resistances in the Coulomb blockade regime. This is of
particular importance for rf operation where ideal impedance matching to 50 Ohm
transmission lines is only possible for a limited range of device resistances.
We report a charge sensitivity of 5.6E-6 e/sqrt(Hz) for a rf-DISET, together
with a demonstration of single-shot detection of small (<=0.1e) charge signals
on microsecond timescales.Comment: 6 pages, 6 figure
Development and operation of the twin radio frequency single electron transistor for solid state qubit readout
Ultra-sensitive detectors and readout devices based on the radio frequency
single electron transistor (rf-SET) combine near quantum-limited sensitivity
with fast operation. Here we describe a twin rf-SET detector that uses two
superconducting rf-SETs to perform fast, real-time cross-correlated
measurements in order to distinguish sub-electron signals from charge noise on
microsecond time-scales. The twin rf-SET makes use of two tuned resonance
circuits to simultaneously and independently address both rf-SETs using
wavelength division multiplexing (WDM) and a single cryogenic amplifier. We
focus on the operation of the twin rf-SET as a charge detector and evaluate the
cross-talk between the two resonance circuits. Real time suppression of charge
noise is demonstrated by cross correlating the signals from the two rf-SETs.
For the case of simultaneous operation, the rf-SETs had charge sensitivities of
and .Comment: Updated version, including new content. Comments most welcome:
[email protected] or [email protected]
Density dependent spin polarisation in ultra low-disorder quantum wires
There is controversy as to whether a one-dimensional (1D) electron gas can
spin polarise in the absence of a magnetic field. Together with a simple model,
we present conductance measurements on ultra low-disorder quantum wires
supportive of a spin polarisation at B=0. A spin energy gap is indicated by the
presence of a feature in the range 0.5 - 0.7 X 2e^2/h in conductance data.
Importantly, it appears that the spin gap is not static but a function of the
electron density. Data obtained using a bias spectroscopy technique are
consistent with the spin gap widening further as the Fermi-level is increased.Comment: 5 Pages 4 Figures email:[email protected]
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