Sacrificing Accuracy for Reduced Computation: Cascaded Inference Based on Softmax Confidence

We study the tradeoff between computational effort and accuracy in a cascade of deep neural networks. During inference, early termination in the cascade is controlled by confidence levels derived directly from the softmax outputs of intermediate classifiers. The advantage of early termination is that classification is performed using less computation, thus adjusting the computational effort to the complexity of the input. Moreover, dynamic modification of confidence thresholds allow one to trade accuracy for computational effort without requiring retraining. Basing of early termination on softmax classifier outputs is justified by experimentation that demonstrates an almost linear relation between confidence levels in intermediate classifiers and accuracy. Our experimentation with architectures based on ResNet obtained the following results. (i) A speedup of 1.5 that sacrifices 1.4% accuracy with respect to the CIFAR-10 test set. (ii) A speedup of 1.19 that sacrifices 0.7% accuracy with respect to the CIFAR-100 test set. (iii) A speedup of 2.16 that sacrifices 1.4% accuracy with respect to the SVHN test set

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.Comment: 6 pages, 4 figures, minor changes from the previous version

Ga-induced atom wire formation and passivation of stepped Si(112)

We present an in-depth analysis of the atomic and electronic structure of the quasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based on Scanning Tunneling Microscopy and Spectroscopy (STM and STS), Rutherford Backscattering Spectrometry (RBS) and Density Functional Theory (DFT) calculations. A new structural model of the Si(112)6 x 1-Ga surface is inferred. It consists of Ga zig-zag chains that are intersected by quasi-periodic vacancy lines or misfit dislocations. The experimentally observed meandering of the vacancy lines is caused by the co-existence of competing 6 x 1 and 5 x 1 unit cells and by the orientational disorder of symmetry breaking Si-Ga dimers inside the vacancy lines. The Ga atoms are fully coordinated, and the surface is chemically passivated. STS data reveal a semiconducting surface and show excellent agreement with calculated Local Density of States (LDOS) and STS curves. The energy gain obtained by fully passivating the surface calls the idea of step-edge decoration as a viable growth method toward 1D metallic structures into question.Comment: Submitted, 13 pages, accepted in Phys. Rev. B, notational change in Fig.

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission and tunneling injection are included in the model. Due to the barrier shape, the injected electrons are non-thermalized. Spin dynamics in the semiconductor heterostructure is controlled by the Rashba and Dresselhaus spin-orbit interactions and described by a single electron spin density matrix formalism. In addition to the linear term, the third order term in momentum for the Dresselhaus interaction is included. Effect of the Schottky potential on the spin dynamics in a 2 dimensional semiconductor device channel is studied. It is found that the injected current can maintain substantial spin polarization to a length scale in the order of 1 micrometer at room temperature without external magnetic fields.Comment: 18 pages, 4 figures, J. Appl. Phys., accepted for publicatio

Electrical expression of spin accumulation in ferromagnet/semiconductor structures

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.Comment: A review to appear in Mod. Phys. Lett.

Oxidation mechanism in metal nanoclusters: Zn nanoclusters to ZnO hollow nanoclusters

Zn nanoclusters (NCs) are deposited by Low-energy cluster beam deposition technique. The mechanism of oxidation is studied by analysing their compositional and morphological evolution over a long span of time (three years) due to exposure to ambient atmosphere. It is concluded that the mechanism proceeds in two steps. In the first step, the shell of ZnO forms over Zn NCs rapidly up to certain limiting thickness: with in few days -- depending upon the size -- Zn NCs are converted to Zn-ZnO (core-shell), Zn-void-ZnO, or hollow ZnO type NCs. Bigger than ~15 nm become Zn-ZnO (core-shell) type: among them, NCs above ~25 nm could able to retain their initial geometrical shapes (namely triangular, hexagonal, rectangular and rhombohedral), but ~25 to 15 nm size NCs become irregular or distorted geometrical shapes. NCs between ~15 to 5 nm become Zn-void-ZnO type, and smaller than ~5 nm become ZnO hollow sphere type i.e. ZnO hollow NCs. In the second step, all Zn-void-ZnO and Zn-ZnO (core-shell) structures are converted to hollow ZnO NCs in a slow and gradual process, and the mechanism of conversion proceeds through expansion in size by incorporating ZnO monomers inside the shell. The observed oxidation behaviour of NCs is compared with theory of Cabrera - Mott on low-temperature oxidation of metal.Comment: 9 pages, 8 figure

A note on the realignment criterion

For a quantum state in a bipartite system represented as a density matrix, researchers used the realignment matrix and functions on its singular values to study the separability of the quantum state. We obtain bounds for elementary symmetric functions of singular values of realignment matrices. This answers some open problems proposed by Lupo, Aniello, and Scardicchio. As a consequence, we show that the proposed scheme by these authors for testing separability would not work if the two subsystems of the bipartite system have the same dimension.Comment: 11 pages, to appear in Journal of Physics A: Mathematical and Theoretica

Intrinsic hole mobility and trapping in a regio-regular poly(thiophene)

The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s and 0.1 cm2/V s and was controlled through thermal processing of the material, which modified the structural order. The transport properties of TFTs were studied as a function of temperature. The field-effect mobility is thermally activated in all films at T<200 K and the activation energy depends on the charge density in the channel. The experimental data is compared to theoretical models for transport, and we argue that a model based on the existence of a mobility edge and an exponential distribution of traps provides the best interpretation of the data. The differences in room-temperature mobility are attributed to different widths of the shallow localized state distribution at the edge of the valence band due to structural disorder in the film. The free carrier mobility of the mobile states in the ordered regions of the film is the same in all structural modifications and is estimated to be between 1 and 4 cm2/V s.Comment: 20 pages, 8 figure

Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling