230 research outputs found

    Effect of spectacular reflection on out‐of‐plane ultrasonographic images reconstructed from three‐dimensional data sets.

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    Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/135445/1/jum2000196391.pd

    Transrectal ultrasound appearance of granulomatous prostatitis.

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    Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/135293/1/jum1990912677.pd

    Electron-Deficient N-Alkyloyl Derivatives of Thienopyrrole-4,6-dione Yield Efficient Polymer Solar Cells with Open-Circuit Voltages > 1 V

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    Poly(benzo[1,2-b:4,5-bâ€Č]dithiophene–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors yield some of the highest open-circuit voltages (VOC, ca. 0.9 V) and fill factors (FF, ca. 70%) in conventional bulk-heterojunction (BHJ) solar cells with PCBM acceptors. Recent work has shown that the incorporation of ring substituents into the side chains of the BDT motifs in PBDTTPD can induce subtle variations in material properties, resulting in an increase of the BHJ device VOC to ∌1 V. In this contribution, we report on the synthesis of N-alkyloyl-substituted TPD motifs (TPD(CO)) and show that the electron-deficient motifs can further lower both the polymer LUMO and HOMO levels, yielding device VOC > 1 V (up to ca. 1.1 V) in BHJ solar cells with PCBM. Despite the high VOC achieved (i.e., low polymer HOMO), BHJ devices cast from TPD(CO)-based polymer donors can reach power conversion efficiencies (PCEs) of up to 6.7%, making these promising systems for use in the high-band-gap cell of tandem solar cells

    Accurate first principles detailed balance determination of Auger recombination and impact ionization rates in semiconductors

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    The technologically important problem of predicting Auger recombination lifetimes in semiconductors is addressed by means of a fully first--principles formalism. The calculations employ highly precise energy bands and wave functions provided by the full--potential linearized augmented plane wave (FLAPW) code based on the screened exchange local density approximation. The minority carrier Auger lifetime is determined by two closely related approaches: \emph{i}) a direct evaluation of the Auger rates within Fermi's Golden Rule, and \emph{ii}) an indirect evaluation, based on a detailed balance formulation combining Auger recombination and its inverse process, impact ionization, in a unified framework. Calculated carrier lifetimes determined with the direct and indirect methods show excellent consistency \emph{i}) between them for nn-doped GaAs and \emph{ii}%) with measured values for GaAs and InGaAs. This demonstrates the validity and accuracy of the computational formalism for the Auger lifetime and indicates a new sensitive tool for possible use in materials performance optimization.Comment: Phys. Rev. Lett. accepte

    A System-Performance-Based Comparison of Sparse Regular and Irregular Antenna Arrays for Millimeter-Wave Multi-User MIMO Base Stations

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    A system-level study was conducted that evaluated the system performance of various dense and sparse antenna array configurations for application in millimeter-wave multi-user multiple-input multiple-output base stations. The performance was evaluated by investigating the probability that a user experiences an outage when a zero-forcing pre-coder is used in a random line of sight scenario. This paper shows that the outage probability significantly decreased when irregular sparse arrays were used rather than regular sparse or regular dense arrays. A re-configurable linear array was designed and realized as a demonstrator. It used 3D-printed aluminum box horn antenna elements that had wide scanning range in the azimuthal plane and a small scanning range in the elevation plane. For the demonstrator, it was shown that the outage probability was reduced from 3.85% to 0.64% by moving from a sparse regularly spaced array to a sparse randomly spaced array. This amounted to an improvement of a factor of six. The sparse topology allowed for the usage of large antenna elements that had an increased gain and still achieved wide-angle scanning, while reducing mutual coupling to a minimum

    A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

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    This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>l0^5 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications

    Impact ionization in GaAs: a screened exchange density functional approach

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    Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restrictions imposed by the conservation of energy and momentum. This anisotropy diminishes as the impacting electron energy increases. A Keldysh type fit performed on the energy-dependent rate shows a rather soft edge and a threshold energy greater than the direct band gap. The consistency with available Monte Carlo and empirical pseudopotential calculations shows the reliability of our approach and paves the way to ab-initio calculations of pair production rates in new and more complex materials.Comment: 11 pages, 4 figures, Submitted to Phys. Rev.

    Der diskrete Charme der Bourgeoisie - Ein Beitrag zur Soziologie des modernen WirtschaftsbĂŒrgertums

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    Entgegen der These der Auflösungserscheinungen des BĂŒrgertums stellt der Autor die Annahme auf den PrĂŒfstand, dass wir es nach wie vor mit gesellschaftlichen Fraktionierungen bĂŒrgerlicher Lebensweisen zu tun haben. Am Beispiel autobiographischer Schriften von deutschen Topmanagern stellt der Text ein modernes VerstĂ€ndnis des WirtschaftsbĂŒrgertums vor, das organisational (durch die Karrieremechanismen der Organisation) und institutionell (im Feld der Wirtschaft) verankert ist. Die moderne Sozialformation des WirtschaftsbĂŒrgertums ist nur noch auf der Grundlage von Organisationen denkbar. Sie lĂ€sst sich, jenseits von Klasse und Stand, als Positionselite beschreiben. Anhand der Autobiographien lĂ€sst sich die Reproduktion dieser Elite auf Basis einer engen VerknĂŒpfung zwischen familialer Herkunft, an organisationale Karrieren gebundene Leistungsbereitschaft und hoher formaler Bildung nachzeichnen. Die Abgrenzung in der Statusreproduktion zwischen Bildungs- und WirtschaftsbĂŒrgertum weist der Autor am jeweiligen VerhĂ€ltnis zur Bildung nach; zwar können beide einen hohen Bildungsgrad in Form von Bildungspatenten nachweisen, doch im Falle des WirtschaftsbĂŒrgertums herrscht ein instrumentelles VerhĂ€ltnis zur Bildung vor. Der hohe Bildungsgrad folgt hier dem BedĂŒrfnis, den Status mittels formaler Bildung abzusichern und damit die Gefahr der eigenen Austauschbarkeit - als Personal der Organisation - zu kompensieren. Der Text macht außerdem generationale Effekte sichtbar; insbesondere indem er darlegt, inwieweit der "moderne Manager" einerseits in der Betonung seines Status seinen VorgĂ€ngern gleicht und sich doch gleichzeitig in der Art der UnternehmensfĂŒhrung abgrenzt - indem er bspw. die Managementkonzepte seiner Zeit aufgreift
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