Proton-produced defects in n-type silicon

Defect energy levels and concentrations for proton irradiated, n-type silicon single crystal

Pyroelectric detector arrays

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array

Two-electron bond-orbital model, 1

Harrison's one-electron bond-orbital model of tetrahedrally coordinated solids was generalized to a two-electron model, using an extension of the method of Falicov and Harris for treating the hydrogen molecule. The six eigenvalues and eigenstates of the two-electron anion-cation Hamiltonian entering this theory can be found exactly general. The two-electron formalism is shown to provide a useful basis for calculating both non-magnetic and magnetic properties of semiconductors in perturbation theory. As an example of the former, expressions for the electric susceptibility and the dielectric constant were calculated. As an example of the latter, new expressions for the nuclear exchanges and pseudo-dipolar coefficients were calculated. A simple theoretical relationship between the dielectric constant and the exchange coefficient was also found in the limit of no correlation. These expressions were quantitatively evaluated in the limit of no correlation for twenty semiconductors

Magnetometer with miniature transducer and automatic transducer scanning apparatus

Magnetometer is simple to operate and has fast response. Transducer is rugged and flat and can measure magnetic fields as close as 0.08 mm from any relatively flat surface. Magnetometer has active region of approximately 0.64 by 0.76 mm and is capable of good spatial resolution of magnetic fields as low as 0.02 Oe (1.6 A/m)

Vapor phase growth of group 3, 4, and 5 compounds by HCl transport of elements

Technique has been devised for vapor-phase epitaxial growth of group 3, 4, and 5 binary, ternary, or quaternary compounds by HCl transport of the constituent elements or dopants. Technique uses all the constituents of the alloy system in their elemental form. Transport of these elements by an HCl + H2 carrier gas facilitates their transport as subchlorides

A magnetic field measurement technique using a miniature transducer

The development, fabrication, and application of a magnetometer are described. The magnetometer has a miniature transducer and is capable of automatic scanning. The magnetometer described here is capable of detecting static magnetic fields as low as 1.6 A/m and its transducer has an active area 0.64 mm by 0.76 mm. Thin and rugged, the transducer uses wire, 0.05 mm in diameter, which is plated with a magnetic film, enabling measurement of transverse magnetic fields as close as 0.08 mm from a surface. The magnetometer, which is simple to operate and has a fast response, uses an inexpensive clip-on milliammeter (commonly found in most laboratories) for driving and processing the electrical signals and readout. A specially designed transducer holding mechanism replaces the XY recorder ink pen; this mechanism provides the basis for an automatic scanning technique. The instrument has been applied to the measurements of magnetic fields arising from remanent magnetization in experimental plated-wire memory planes and regions of magnetic activity in geological rock specimens

New angles on D-branes

A low-energy background field solution is presented which describes several D-membranes oriented at angles with respect to one another. The mass and charge densities for this configuration are computed and found to saturate the BPS bound, implying the preservation of one-quarter of the supersymmetries. T-duality is exploited to construct new solutions with nontrivial angles from the basic one.Comment: Latex, 12 pages, still no figures, references update

Localized Branes and Black Holes

We address the delocalization of low dimensional D-branes and NS-branes when they are a part of a higher dimensional BPS black brane, and the homogeneity of the resulting horizon. We show that the effective delocalization of such branes is a classical effect that occurs when localized branes are brought together. Thus, the fact that the few known solutions with inhomogeneous horizons are highly singular need not indicate a singularity of generic D- and NS-brane states. Rather, these singular solutions are likely to be unphysical as they cannot be constructed from localized branes which are brought together from a finite separation.Comment: 13 pages, RevTex, no figures, few references and comments adde

Hermitian D-brane solutions

A low-energy background field solution describing D-membrane configurations is constructed which is distinguished by the appearance of a Hermitian metric on the internal space. This metric is composed of a number of independent harmonic functions on the transverse space. Thus this construction generalizes the usual harmonic superposition rule. The BPS bound of these solutions is shown to be saturated indicating that they are supersymmetric. By means of T-duality, we construct more solutions of the IIA and IIB theories.Comment: 14 pages, Latex, no figure