551 research outputs found
"Building" exact confidence nets
Confidence nets, that is, collections of confidence intervals that fill out
the parameter space and whose exact parameter coverage can be computed, are
familiar in nonparametric statistics. Here, the distributional assumptions are
based on invariance under the action of a finite reflection group. Exact
confidence nets are exhibited for a single parameter, based on the root system
of the group. The main result is a formula for the generating function of the
coverage interval probabilities. The proof makes use of the theory of
"buildings" and the Chevalley factorization theorem for the length distribution
on Cayley graphs of finite reflection groups.Comment: 20 pages. To appear in Bernoull
The Role of Multilevel Landau-Zener Interference in Extreme Harmonic Generation
Motivated by the observation of multiphoton electric dipole spin resonance
processes in InAs nanowires, we theoretically study the transport dynamics of a
periodically driven five-level system, modeling the level structure of a
two-electron double quantum dot. We show that the observed multiphoton
resonances, which are dominant near interdot charge transitions, are due to
multilevel Landau-Zener-Stuckelberg-Majorana interference. Here a third energy
level serves as a shuttle that transfers population between the two resonant
spin states. By numerically integrating the master equation we replicate the
main features observed in the experiments: multiphoton resonances (as large as
8 photons), a robust odd-even dependence, and oscillations in the electric
dipole spin resonance signal as a function of energy level detuning
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Phonon-Assisted Gain in a Semiconductor Double Quantum Dot Maser
We develop a microscopic model for the recently demonstrated double quantum
dot (DQD) maser. In characterizing the gain of this device we find that, in
addition to the direct stimulated emission of photons, there is a large
contribution from the simultaneous emission of a photon and a phonon, i.e., the
phonon sideband. We show that this phonon-assisted gain typically dominates the
overall gain which leads to masing. Recent experimental data are well fit with
our model.Comment: v1: 6 pgs, 2 figures; v2: 6 pgs, 3 figures, added Fig 2b and Fig. 3b,
modified main text; v3: 6+ pgs, 3 figures, modified main tex
Injection Locking of a Semiconductor Double Quantum Dot Micromaser
Emission linewidth is an important figure of merit for masers and lasers. We
recently demonstrated a semiconductor double quantum dot (DQD) micromaser where
photons are generated through single electron tunneling events. Charge noise
directly couples to the DQD energy levels, resulting in a maser linewidth that
is more than 100 times larger than the Schawlow-Townes prediction. Here we
demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD
emission to a coherent tone that is injected to the input port of the cavity.
We measure the injection locking range as a function of cavity input power and
show that it is in agreement with the Adler equation. The position and
amplitude of distortion sidebands that appear outside of the injection locking
range are quantitatively examined. Our results show that this unconventional
maser, which is impacted by strong charge noise and electron-phonon coupling,
is well described by standard laser models
Nonadiabatic quantum control of a semiconductor charge qubit
We demonstrate multipulse quantum control of a single electron charge qubit.
The qubit is manipulated by applying nonadiabatic voltage pulses to a surface
depletion gate and readout is achieved using a quantum point contact charge
sensor. We observe Ramsey fringes in the excited state occupation in response
to a pi/2 - pi/2 pulse sequence and extract T2* ~ 60 ps away from the charge
degeneracy point. Simulations suggest these results may be extended to
implement a charge-echo by reducing the interdot tunnel coupling and pulse rise
time, thereby increasing the nonadiabaticity of the pulses.Comment: Related papers at http://pettagroup.princeton.ed
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