Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices

A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concept

NACA Technical Notes

Report presenting an investigation to determine the effects of some of the basic parameters on the thrust of a simple downward-directed jet beneath a flat plate in a static-thrust facility. Some of the variables investigated included the size and shape of the flat plate, aspect ratio of the plate, distance of the flat plate and nozzle exit above the ground, and surface conditions of the ground

Modeling and Simulations of Beam Stabilization in Edge-Emitting Broad Area Semiconductor Devices

A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts