Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.Comment: 5 pages, 5 figure

Accretion of a satellite onto a spherical galaxy. II. Binary evolution and orbital decay

We study the dynamical evolution of a satellite orbiting outside of a companion spherical galaxy. The satellite is subject to a back-reaction force resulting from the density fluctuations excited in the primary stellar system. We evaluate this force using the linear response theory developed in Colpi and Pallavicini (1997). The force is computed in the reference frame comoving with the primary galaxy and is expanded in multipoles. To capture the relevant features of the physical process determining the evolution of the detached binary, we introduce in the Hamiltonian the harmonic potential as interaction potential among stars. The dynamics of the satellite is computed self-consistently. We determine the conditions for tidal capture of a satellite from an asymptotic free state. If the binary comes to existence as a bound pair, stability against orbital decay is lost near resonance. The time scale of binary coalescence is computed as a function of the eccentricity and mass ratio. In a comparison with Weinberg's perturbative technique we demonstrate that pinning the center of mass of the galaxy would induce a much larger torque on the satellite.Comment: 13 pages, Tex,+ 10 .ps figures Submitted to The Astrophysical Journa

Multi-excitonic complexes in single InGaN quantum dots

Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.Comment: 3 pages, 4 figure

GaN/AlN Quantum Dots for Single Qubit Emitters

We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation.Comment: 6 pages, 9 figures. Accepted at Journal of Physics: Condensed Matte

Tidal Effects in Clusters of Galaxies

High-redshift clusters of galaxies show an over-abundance of spirals by a factor of 2-3, and the corresponding under-abundance of S0 galaxies, relative to the nearby clusters. This morphological evolution can be explained by tidal interactions with neighboring galaxies and with the hierarchically growing cluster halo. The efficiency of tidal interactions depends on the size and structure of the cluster, as well as on the epoch of its formation. I simulate the formation and evolution of Virgo-type clusters in three cosmologies: a critical density model Omega_0=1, an open model Omega_0=0.4, and a flat model Omega_0=0.4 with a cosmological constant. The orbits of identified halos are traced with a high temporal resolution (~10^7 yr). Halos with low relative velocities merge only shortly after entering the cluster; after virialization mergers are suppressed. The dynamical evolution of galaxies is determined by the tidal field along their trajectories. The maxima of the tidal force do not always correspond to closest approach to the cluster center. They are produced to a large extent by the local density structures, such as the massive galaxies and the unvirialized remnants of infalling groups of galaxies. Collisions of galaxies are intensified by the substructure, with about 10 encounters within 10 kpc per galaxy in the Hubble time. These very close encounters add an important amount (10-50%) of the total heating rate. The integrated effect of tidal interactions is insufficient to transform a spiral galaxy into an elliptical, but can produce an S0 galaxy. Overall, tidal heating is stronger in the low Omega_0 clusters

Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides

We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL). The emission lines exhibit a systematic linear polarization in the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]--a symmetry that is non-native to hexagonal crystals. Eight-band k.p calculations reveal a mechanism that can explain the observed polarizations: The character of the hole(s) in an excitonic complex determines the polarization direction of the respective emission if the QD is slightly elongated. Transitions involving A-band holes are polarized parallel to the elongation; transitions involving B-type holes are polarized in the orthogonal direction. The energetic separation of both hole states is smaller than 10 meV. The mechanism leading to the linear polarizations is not restricted to InGaN QDs, but should occur in other wurtzite-nitride QDs and in materials with similar valence band structure.Comment: Conf. Proc. of the MSS-13 in Genova 2007, accepted at Physica