1,035 research outputs found
Inversion of moments to retrieve joint probabilities in quantum sequential measurements
A sequence of moments encode the corresponding probability distribution.
Probing if quantum joint probability distribution can be retrieved from the
associated set of moments -- realized in the sequential measurement of a
dichotomic observable at different time intervals -- reveals a negative answer
i.e., the joint probabilities of sequential measurements do not agree with the
ones obtained by inverting the moments. This is indeed a reflection of the
non-existence of a bonafide grand joint probability distribution, consistent
with all the physical marginal probability distributions. Here we explicitly
demonstrate that given the set of moments, it is not possible to retrieve the
three-time quantum joint probability distribution resulting from quantum
sequential measurement of a single qubit dichotomic observable at three
different times. Experimental results using a nuclear magnetic resonance (NMR)
system are reported here to corroborate these theoretical observations viz.,
the incompatibility of the three-time joint probabilties with those extracted
from the moment sequence.Comment: 7 pages, 5 figures, RevTe
Observation of Spin-glass-like Behavior in SrRuO3 Epitaxial Thin Films
We report the observation of spin-glass-like behavior and strong magnetic
anisotropy in extremely smooth (~1-3 \AA) roughness) epitaxial (110) and (010)
SrRuO3 thin films. The easy axis of magnetization is always perpendicular to
the plane of the film (unidirectional) irrespective of crystallographic
orientation. An attempt has been made to understand the nature and origin of
spin-glass behavior, which fits well with Heisenberg model.Comment: 5 pages, 5 Figure
Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films
This work was supported by the DOE-EPSCoR Grant No. DE-FG02-08ER46526. Acknowledgment is also due to NSF Grant No. #1002410 for providing fellowships to R.K.K., D.B., and J.S.Y.Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PVproperties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.Publisher PDFPeer reviewe
Unipolar resistive switching in cobalt titanate thin films
We report giant resistive switching of an order of 104, long-time charge
retention characteristics up to 104 s, non-overlapping SET and RESET voltages,
ohmic in low resistance state (LRS) and space charge limited current (SCLC)
mechanism in high resistance state (HRS) properties in polycrystalline
perovskite Cobalt Titanate (CoTiO3 ~ CTO) thin films. Impedance spectroscopy
study was carried out for both LRS and HRS states which illustrates that only
bulk resistance changes after resistance switching, however, there is a small
change (<10% which is in pF range) in the bulk capacitance value in both
states. These results suggest that in LRS state current filaments break the
capacitor in many small capacitors in a parallel configuration which in turn
provides the same capacitance in both states even there was 90 degree changes
in phase-angle and an order of change in the tangent loss.Comment: 7 pages, 4 figure
Experimental verification of the ab initio phase transition sequence in SrZrO3 and comparisons with SrHfO3 and SrSnO3
AK acknowledges the CSIR-National Physical Laboratoryinternal net work project, INDIA. Hitesh Borkar would like to acknowledge the CSIR (SRF) to provide fellowship to carry out PhD program.We present detailed Raman studies of SrZrO3 (SZO) that show three anomalies in Raman modes:One has a small jump in frequency ω; one has its intensity vanish; and a third has a sharp change in temperature derivative dω(T)/dT from flat below T = 600 K to a Curie-Weiss dependence above 600 K with extrapolation to zero frequency at the known transition temperature T = 970K, thereby proving the latter to be displacive. In addition, the P4mm ferroelectric phase predicted at high stresses [Amisi et al., Phy. Rev. B 85, 064112 (2012)] has preliminary support from polarization-voltage experiments. The inference of a new transition in the temperature region 600-650 K is in disagreement with neutron studies. Comparisons are given for family member SrSnO3 and SrHfO3, and we discuss the different conclusions of Kennedy and Knight, J Phys.Condens. Mat. 27, 365401 (2015). We show that a known transition in SrHfO3 is also displacive with a well-behaved soft mode.Publisher PDFPeer reviewe
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