Experimental demonstration of a novel heterogeneously integrated III-V on Si microlaser

In this work we present the first experimental demonstration of a novel class of heterogeneously integrated III-V-on-silicon microlasers. We first show that by coupling a silicon cavity to a III-V wire, the interaction between the propagating mode in the III-V wire and the cavity mode in the silicon resonator results in high, narrow band reflection back into the III-V waveguide, forming a so-called resonant mirror. By combining two such mirrors and providing optical gain in the III-V wire in between these 2 mirrors, laser operation can be realized. We simulate the reflectivity spectrum of such a resonant mirror using 3D FDTD and discuss the results. We also present experimental results of the very first optically pumped heterogeneously integrated resonant mirror laser. The fabricated device measures 55 mu m by 2 mu m and shows single mode laser emission with a side-mode suppression ratio of 37 dB

Field Localization and Enhancement of Phase Locked Second and Third Harmonic Generation in Absorbing Semiconductor Cavities

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650nm and 433nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics become localized inside the cavity leading to relatively large conversion efficiencies. Field localization plays a pivotal role and ushers in a new class of semiconductor-based devices in the visible and UV ranges

Overview of the EU FP7-project HISTORIC

HISTORIC aims to develop and test complex photonic integrated circuits containing a relatively large number of digital photonic elements for use in e.g. all-optical packet switching. These photonic digital units are all-optical flip-flops based on ultra compact laser diodes, such as microdisk lasers and photonic crystal lasers. These lasers are fabricated making use of the heterogeneous integration of InP membranes on top of silicon on insulator (SOI) passive optical circuits. The very small dimensions of the lasers are, at least for some approaches, possible because of the high index contrast of the InP membranes and by making use of the extreme accuracy of CMOS processing. All-optical flip-flops based on heterogeneously integrated microdisk lasers with diameter of 7.5 mu m have already been demonstrated. They operate with a CW power consumption of a few mW and can switch in 60ps with switching energies as low as 1.8 fJ. Their operation as all-optical gate has also been demonstrated. Work is also on-going to fabricate heterogeneously integrated photonic crystal lasers and all-optical flip-flops based on such lasers. A lot of attention is given to the electrical pumping of the membrane InP-based photonic crystal lasers and to the coupling to SOI wire waveguides. Optically pumped photonic crystal lasers coupled to SOI wires have been demonstrated already. The all-optical flip-flops and gates will be combined into more complex photonic integrated circuits, implementing all-optical shift registers, D flip-flops, and other all-optical switching building blocks. The possibility to integrate a large number of photonic digital units together, but also to integrate them with compact passive optical routers such as AWGs, opens new perspectives for the design of integrated optical processors or optical buffers. The project therefore also focuses on designing new architectures for such optical processing or buffer chips

Extremely uniform lasing wavelengths of InP microdisk lasers heterogeneously integrated on SOI

A standard deviation in lasing wavelength lower than 500pm is characterized on nominally identical and optically-pumped microdisk lasers, heterogeneously integrated on the same SOI circuit. This lasing wavelength uniformity is obtained using electron-beam lithography

Laser sources on a heterogeneous III-V/silicon platform

The heterogeneous integration of III-V semiconductor lasers on a silicon waveguide platform using DVS-BCB adhesive bonding is reviewed. Both mW-level lasers and ultra-compact laser sources are discussed