Spin noise spectroscopy in GaAs

We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the electron spin relaxation time and the electron Lande g-factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with an unpretentious theory based on Poisson distribution probability.Comment: 4 pages, 4 figure

Measurement of heavy-hole spin dephasing in (InGa)As quantum dots

We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time {\tau}_{fast}^{hh} of 27 ns and a second, long spin relaxation time {\tau}_{slow}^{hh} which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.Comment: accepted to be published in AP

Component Depreciation: A Tax Planning Strategy for Small Businesses

Recent federal   court  and  Internal  Revenue  Service  (IRS)  decisions  have  opened  up  an excellent  opportunity for   both  small  and  large  businesses  to  once  again  use  component depreciation,  thus  accelerating  depreciation  deductions  and reducing  cost  of buildings and improvements  in present  value terms.   Minor changes in the design or in the procedures followed  in purchasing  a building make it possible  to shorten the depreciable lives of portions of the "building". The savings can easily exceed the additional design, construction, and bidding costs especially if the changes are minor. Small business owners,  who may  not always retain  a fulltime  tax  advisor,  should  be  aware  that  it  is  necessary  to  involve  a  tax consultant at the beginning of the design process for construction projects or early in the search for  a building purchase

Electron spin orientation under in-plane optical excitation in GaAs quantum wells

We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in the growth direction and for in-plane excitation. Time- and polarization-resolved photoluminescence excitation measurements show, for resonant excitation of the heavy-hole conduction band transition, a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in the growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has the same (opposite) direction for in-plane excitation (in the growth direction) as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.Comment: 10 pages, 4 figures, final versio

Highly anisotropic g-factor of two-dimensional hole systems

Coupling the spin degree of freedom to the anisotropic orbital motion of two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman splitting with respect to different orientations of an in-plane magnetic field B relative to the crystal axes. This mechanism has no analogue in the bulk band structure. We obtain good, qualitative agreement between theory and experimental data, taken in GaAs 2D hole systems grown on (113) substrates, showing the anisotropic depopulation of the upper spin subband as a function of in-plane B.Comment: 4 pages, 3 figure

Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices

We investigate the emission of multimodal polarized light from Light Emitting Devices due to spin-aligned carriers injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as non-radiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g-factor and magnetic field affect the polarization degree of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring spin-polarization degree of carrier injection into non-magnetic semicondutors.Comment: 15 pages, 7 figures, replaced by revised version. To appear in Phys. Rev.

Spin filtering and magnetoresistance in ballistic tunnel junctions

We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in conjunction with the suppression/enhancement of the spin-dependent Fermi seas in semimagnetic contacts gives rise to (i) spin-split kinks in the MR of single barriers and (ii) a robust beating pattern in the MR of double barriers with a semimagnetic well. We believe these are unique signatures for quantum filtering.Comment: Added references + corrected typo

Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Land\'e-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Spin-drift transport and its applications

We study the generation of non-equilibrium spin currents in systems with spatially-inhomogeneous magnetic potentials. For sufficiently high current densities, the spin polarization can be transported over distances significantly exceeding the intrinsic spin-diffusion length. This enables applications that are impossible within the conventional spin-diffusion regime. Specifically, we propose dc measurement schemes for the carrier spin relaxation times, $T_1$ and $T_2$, as well as demonstrate the possibility of spin species separation by driving current through a region with an inhomogeneous magnetic potential.Comment: 4 pages, 2 eps figure