Electrons, Photons, and Force: Quantitative Single-Molecule Measurements from Physics to Biology

Single-molecule measurement techniques have illuminated unprecedented details of chemical behavior, including observations of the motion of a single molecule on a surface, and even the vibration of a single bond within a molecule. Such measurements are critical to our understanding of entities ranging from single atoms to the most complex protein assemblies. We provide an overview of the strikingly diverse classes of measurements that can be used to quantify single-molecule properties, including those of single macromolecules and single molecular assemblies, and discuss the quantitative insights they provide. Examples are drawn from across the single-molecule literature, ranging from ultrahigh vacuum scanning tunneling microscopy studies of adsorbate diffusion on surfaces to fluorescence studies of protein conformational changes in solution

STM study of molecule double-rows in mixed self-assembled monolayers of alkanethiols

Using scanning tunnelling microscopy (STM), we have studied mixed self-assembled monolayers of linear alkanethiol molecules. Nonanedithiol (C9S2), nonanethiol (C9S), decanethiol (C10S), and dodecanethiol (C12S) were inserted into a self-assembled octanethiol (C8S) host matrix monolayer on an Au(111) surface using a two-step method. Quasi-one-dimensional double-row structures were found in the ordered, close-packed domains of the C8S matrix for each mixed monolayer system. These close-packed domains coexist with ordered striped phase domains (for C9S and C10S) or with a disordered phase (for C9S2 and C 12S). Results from high-resolution images suggest that the double-rows are composed of inserted non-nearest-neighbor substitutional molecules, the ordering of which may be a result of locally induced surface stress

Gate-Tunable Photoemission from Graphene Transistors

Cataloged from PDF version of article.In this Letter, we report gate-tunable X-ray photoelectron emission from back-gated graphene transistors. The back-gated transistor geometry allows us to study photoemission from graphene layer and the dielectric substrate at various gate voltages. Application of gate voltage electrostatically dopes graphene and shifts the binding energy of photoelectrons in various ways depending on the origin and the generation mechanism(s) of the emitted electrons. The gate-induced shift of the Fermi energy of graphene alters the binding energy of the C 1s electrons, whereas the electric field of the gate electrodes shift the binding energy of core electrons emitted from the gate dielectric underneath the graphene layer. The gradual change of the local potential through depths of the gate dielectric provides quantitative electrical information about buried interfaces. Our results suggest that gate-tunable photoemission spectra with chemically specific information linked with local electrical properties opens new routes to elucidating operation of devices based especially on layered materials