46 research outputs found
Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys
Weakly ferromagnetic alloys are being used by several groups in the study of
superconducting/ferromagnetic hybrid systems. Because spin-flip and spin-orbit
scattering in such alloys disrupt the penetration of pair correlations into the
ferromagnetic material, it is desirable to have a direct measurement of the
spin memory length in such alloys. We have measured the spin memory length at
4.2 K in sputtered Pd0.88Ni0.12 and Pd0.987Fe0.013 alloys using methods based
on current-perpendicular-to-plane giant magnetoresistance. The alloys are
incorporated into hybrid spin valves of various types, and the spin memory
length is determined by fits of the Valet-Fert spin-transport equations to data
of magnetoresistance vs. alloy thickness. For the case of PdNi alloy, the
resulting values of the spin memory length are lsf(PdNi) = 2.8 +/- 0.5 nm and
5.4 +/- 0.6 nm, depending on whether or not the PdNi is exchange biased by an
adjacent Permalloy layer. For PdFe, the spin memory length is somewhat longer,
lsf(PdFe) = 9.6 +/- 2 nm, consistent with earlier measurements indicating lower
spin-orbit scattering in that material. Unfortunately, even the longer spin
memory length in PdFe may not be long enough to facilitate observation of
spin-triplet superconducting correlations predicted to occur in
superconducting/ferromagnetic hybrid systems in the presence of magnetic
inhomogeneity.Comment: 7 pages, 8 figure
Spin Triplet Supercurrent in Co/Ni Multilayer Josephson Junctions with Perpendicular Anisotropy
We have measured spin-triplet supercurrent in Josephson junctions of the form
S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer with in-plane
magnetization, and F is a Ni/[Co/Ni]n multilayer with out-of-plane
magnetization. The supercurrent in these junctions decays very slowly with
F-layer thickness, and is much larger than in similar junctions not containing
the two F' layers. Those two features are the characteristic signatures of
spin-triplet supercurrent, which is maximized by the orthogonality of the
magnetizations in the F and F' layers. Magnetic measurements confirm the
out-of-plane anisotropy of the Co/Ni multilayers. These samples have their
critical current optimized in the as-prepared state, which will be useful for
future applications.Comment: 4 pages, 4 figures, formatted in RevTeX version 4. Submitted to
Physical Review B on August 13th, 201
Characteristics of strong ferromagnetic Josephson junctions with epitaxial barriers
We present the measurement of superconductor/ferromagnetic Josephson junctions, based on an epitaxial Nb bottom electrode and epitaxial Fe20Ni80 barrier. Uniform junctions have been fabricated with a barrier thicknesses in the range 2-12 nm. The maximum critical current density similar to 2.4 +/- 0.2 x 10(9) Am-2 was found for a device with a 3-nm-thick barrier at 4.2 K, corresponding to an average characteristic voltage ICRN similar to 16 mu V. The ICRN showed a nonmonotonic behavior with Fe20Ni80 thickness. The variation of the resistance of a unit area AR(N), of the junctions with barrier thickness gave a Nb/Py specific interface resistance of 6.0 +/- 0.5 f Omega m(2) and Fe20Ni80 resistivity of 174 +/- 50 n Omega m, consistent with other studies in polycrystalline samples
Spin transfer torques in nonlocal lateral spin valve
We report a theoretical study on the spin and electron transport in the
nonlocal lateral spin valve with non-collinear magnetic configuration. The
nonlocal magnetoresistance, defined as the voltage difference on the detection
lead over the injected current, is derived analytically. The spin transfer
torques on the detection lead are calculated. It is found that spin transfer
torques are symmetrical for parallel and antiparallel magnetic configurations,
which is different from that in conventional sandwiched spin valve.Comment: 7 papges, 5 figure
Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au
We compare magnetoresistances (MR) and switching currents (I_s) at room
temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing
current-induced magnetization switching (CIMS), with non-magnetic metals N =
Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic
differences in MR and I_s for the different N-metals are modest, suggesting
that Ag and Au represent potentially viable alternatives for CIMS studies and
devices to the more widely used Cu.Comment: Submitted for Magnetism Conference, MMM-0
Supercurrent in ferromagnetic Josephson junctions with heavy-metal interlayers. II. Canted magnetization
It has been suggested by theoretical works that equal-spin triplet pair correlations can be generated in Josephson junctions containing both a ferromagnet and a source of spin-orbit coupling. Our recent experimental work suggested that such triplet correlations were not generated by a Pt spin-orbit coupling layer when the ferromagnetic weak link had entirely in-plane anisotropy [Satchell and Birge, Phys. Rev. B 97, 214509 (2018)]. Here, we revisit the experiment using Pt again as a source for spin-orbit coupling and a [Co(0.4 nm)/Ni(0.4 nm)]×8/Co(0.4 nm) ferromagnetic weak link with both in-plane and out-of-plane magnetization components (canted magnetization). The canted magnetization more closely matches theoretical predictions than our previous experimental work. Our results suggest that there is no supercurrent contribution in our junctions from equal-spin triplet pair correlations. In addition, this work includes systematic study of supercurrent dependence on Cu interlayer thickness, a common additional layer used to buffer the growth of the ferromagnet and which for Co may significantly improve the growth morphology. We report that the supercurrent in the [Co(0.4 nm)/Ni(0.4 nm)]×8/Co(0.4 nm) ferromagnetic weak links can be enhanced by over two orders of magnitude by tuning the Cu interlayer thickness. This result has important application in superconducting spintronics, where large critical currents are desirable for devices