Response to commentary “Zinc is decreased in prostate cancer: an established relationship of prostate cancer!”

10.1007/s00775-010-0737-8Journal of Biological Inorganic Chemistry1619-13JJBC

Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

acceptedVersionPeer reviewe

Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

The rise of low-temperature atomic layer deposition (ALD) has made it very attractive to produce high- κ dielectric for flexible electronic devices. Similarly, selective deposition of ALD films is of great relevance for circuitry. We demonstrated a simple method of using a physical mask to block the film's growth in selected polymeric and flexible substrate areas during a low-pressure ALD process. A low-cost silicone adhesive polyimide tape was used to manually mask selected areas of bare substrates and aluminum strips deposited by evaporation. 190 cycles of aluminum oxide (Al 2O 3) and hafnium oxide (HfO 2) were deposited at temperatures ranging from 100 to 250 °C. Using x-ray photoelectron spectroscopy (XPS) analysis and energy dispersive x-ray spectroscopy (EDS), we showed that the mask was effective in protecting the areas under the tape. The mask did not show any modification of shape for an exposure of 10 h at 250 °C, hence keeping the form of the masked area intact. An analysis of the unmasked area by ellipsometry (632.8 nm) and x ray shows a regular film with a thickness variation under 2 nm for a given temperature and constant refractive index. EDS, selected-area XPS, and imaging XPS show an evident change of elemental content at the interface of two areas. By XPS, we established that the structure of the films was not affected by the mask, the films were stoichiometric, and there was no effect of outgassing from the adhesive film.publishedVersionPeer reviewe

Visible to near-infrared broadband fluorescence from Ce-doped silica fiber

Abstract We investigate the fluorescence characteristics of a purely Ce-doped silica fiber and demonstrate broad-bandwidth fluorescence across the visible and near-infrared. The Ce-doped fiber is fabricated using standard modified chemical vapor deposition technology. Trace metal analysis by inductively coupled plasma mass spectrometry confirmed the purity of Ce-doping. The Ce valence state of 3+ was revealed by X-ray photoelectron spectroscopy. The optimum pump wavelength for the broadest luminescence from a fiber is scanned between 405 nm to 440 nm wavelength of diode lasers operating under continuous-wave regime. The strongest pump absorption is observed at the wavelength of 405 nm. Variation of pump power and fiber length results in the demonstration of broad-bandwidth fluorescence with spectral widths up to 301 nm (at -10 dB). The measured fluorescence spectra cover the wavelength range from ∼458 nm to ∼819 nm with spectral power densities of up to 2.4 nW/nm