583 research outputs found

    Low-Power consumption Franz-Keldysh effect plasmonic modulator

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    In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm long modulator is demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption is as low as 20 fJ/bit

    Long-wave infrared integrated resonators in the 7.5-9 mu m wavelength range

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    We present broadband on-chip resonators based on SiGe graded-index waveguides operating in the long-wave infrared spectral range from 7.5 to 9.0 mu m wavelength range. A quality factor up to 10(5) has been measured, while an intrinsic quality factor of 1.13 x 10(5) has been extracted from the measurements. Thermal tuning of the phase in the micro-ring has been used to overcome the limitation of the experimental setup in terms of spectral resolution. These results pave the way toward the development of integrated frequency comb operating in the long-wave infrared range

    Tumor suppressor Tsc1 is a new Hsp90 co-chaperone that facilitates folding of kinase and non-kinase clients

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    The tumor suppressors Tsc1 and Tsc2 form the tuberous sclerosis complex (TSC), a regulator of mTOR activity. Tsc1 stabilizes Tsc2; however, the precise mechanism involved remains elusive. The molecular chaperone heat-shock protein 90 (Hsp90) is an essen- tial component of the cellular homeostatic machinery in eukary- otes. Here, we show that Tsc1 is a new co-chaperone for Hsp90 that inhibits its ATPase activity. The C-terminal domain of Tsc1 (998–1,164 aa) forms a homodimer and binds to both protomers of the Hsp90 middle domain. This ensures inhibition of both subunits of the Hsp90 dimer and prevents the activating co- chaperone Aha1 from binding the middle domain of Hsp90. Conversely, phosphorylation of Aha1-Y223 increases its affinity for Hsp90 and displaces Tsc1, thereby providing a mechanism for equilibrium between binding of these two co-chaperones to Hsp90. Our findings establish an active role for Tsc1 as a facilita- tor of Hsp90-mediated folding of kinase and non-kinase clients— including Tsc2—thereby preventing their ubiquitination and proteasomal degradation

    Overcoming the barriers to greater public engagement

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    Integrating science communication training into an undergraduate research project encourages greater academic involvement in public engagement, maximizes audience size, and provides high-quality research data

    Mapping Public Engagement with Research in a UK University

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    Notwithstanding that ‘public engagement’ is conceptualised differently internationally and in different academic disciplines, higher education institutions largely accept the importance of public engagement with research. However, there is limited evidence on how researchers conceptualise engagement, their views on what constitutes engagement and the communities they would (or would not) like to engage with. This paper presents the results of a survey of researchers in the Open University that sought to gather data to fill these gaps. This research was part of an action research project designed to embed engagement in the routine practices of researchers at all levels. The findings indicate that researchers have a relatively narrow view of public engagement with research and the communities with which they interact. It also identified that very few strategically evaluate their public engagement activities. We conclude by discussing some of the interventions we have introduced with the aim of broadening and deepening future researcher engagement

    Silicon optical modulators for high data rate applications

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    Abstract In this work we describe the carrier depletion MZI modulators, slow wave structures for modulation enhancement and the QCSE modulator which are under development in the European HELIOS project and the UK Silicon Photonics project. Introduction High performance silicon optical modulators are key to many silicon based photonic applications. Over the previous decade the development seen in the performance of silicon optical modulators has been vast. Several routes to modulation have been used to overcome the lack of a strong electro optic effect in silicon. These include the plasma dispersion effect, III-V hybrid device fabrication, SiGe devices, Polymer and Strain induced electro-optic effects. Reported performances now regularly range from 10Gbit/s up to 40Gbit/s. HELIOS, which is a European FP7 funded project and the UK silicon photonics project (UKSP), funded by the EPSRC both involve the development of the different photonic components required to form photonic circuits with a range of functionality. Within both projects there is strong modulator activity with carrier depletion based modulation, QCSE modulation and structures to gain enhancement of the modulation effect under development. Carrier depletion modulation Optical modulators based upon free carrier depletion are widely regarded as being the simplest approach to achieve high performance modulation in silicon. They operate by reverse biasing a diode structure which is incorporated in or around an optical waveguide. The depletion of free carriers therefore interacts with the propagating light causing a change in phase through the plasma dispersion effect. Within the HELIOS project two phase modulators based upon this approach are under investigation using both PN and PIPIN diodes. Cross sectional diagrams of these devices are shown in figure 1. The first structure is based in silicon-on-insulator (SOI) of 220nm thickness. The waveguide section and the slab to one side is doped p type. The slab on the other side of the waveguide is then doped n type setting up a pn junction at the edge of the waveguide rib. The concentration of the n type doping is made larger than the p type doping such that the depletion region extends mainly into the waveguide during reverse bias. These lightly doped p and n type regions extend out to meet highly doped regions which in turn provide ohmic contacts to coplanar waveguide electrodes which are used to drive the device. The devic
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