Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m

Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 77, 2271 (2000) and may be found at

L∞ spaces and derived loop spaces

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Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

Article copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The article appeared in Journal of Applied Physics 97, 013536 (2005) and may be found at

Fast tuneable InGaAsP DBR laser using quantum-confined stark-effect-induced refractive index change

We report a monolithically integrated InGaAsP DBR ridge waveguide laser that uses the quantum-confined Stark effect (QCSE) to achieve fast tuning response. The laser incorporates three sections: a forward-biased gain section, a reverse-biased phase section, and a reverse-biased DBR tuning section. The laser behavior is modeled using transmission matrix equations and tuning over similar to 8 nm is predicted. Devices were fabricated using post-growth shallow ion implantation to reduce the loss in the phase and DBR sections by quantum well intermixing. The lasing wavelength was measured while varying the reverse bias of the phase and DBR sections in the range 0 V to < - 2.5 V. Timing was noncontinuous over a similar to 7-nm-wavelength range, with a side-mode suppression ratio of similar to 20 dB. Coupled cavity effects due to the fabrication method used introduced discontinuities in tuning. The frequency modulation (FM) response was measured to be uniform within 2 dB over the frequency range 10 MHz to 10 GHz, indicating that tuning times of 100 ps are possible

On the diffusion of lattice matched InGaAs/InP microstructures

Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Bollet et al., J. Appl. Phys. 93, 3881 (2003) and may be found at http://link.aip.org/link/?jap/93/388

Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator

We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above $10^{5}$. Using microwave absorption spectroscopy we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of $1$ MHz and spin linewidths of $50 - 65$ MHz.Comment: 4 pages, 2 Figure

A monolithic MQW InP-InGaAsP-Based optical comb generator

We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multi-section quaternary/quaternary eight-quantum-well InP-InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated using quantum-confined Stark-effect phase-induced refractive index modulation to achieve fast modulation up to 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum-well intermixing to realize low-loss phase adjustment and modulation sections. The output was quasicontinuous wave with intensity modulation at less than 20% for a total output power of 2 mW. The linewidth of each line was limited by the linewidth of the free running laser at an optimum of 25 MHz full-width at half-maximum. The comb generator produces a number of lines with a spacing exactly equal to the modulation frequency (or a multiple of it), differential phase noise between adjacent lines of -82 dBc/Hz at 1-kHz offset (modulation source-limited), and a potential comb spectrum width of up to 2 THz (15 nm), though the comb spectrum was not continuous across the full span