Designing potentials by sculpturing wires

Magnetic trapping potentials for atoms on atom chips are determined by the current flow in the chip wires. By modifying the shape of the conductor we can realize specialized current flow patterns and therefore micro-design the trapping potentials. We have demonstrated this by nano-machining an atom chip using the focused ion beam technique. We built a trap, a barrier and using a BEC as a probe we showed that by polishing the conductor edge the potential roughness on the selected wire can be reduced. Furthermore we give different other designs and discuss the creation of a 1D magnetic lattice on an atom chip.Comment: 6 pages, 8 figure

Making Sigma-Protocols Non-interactive Without Random Oracles

Damg˚ard, Fazio and Nicolosi (TCC 2006) gave a transformation of Sigma-protocols, 3-move honest verifier zero-knowledge proofs, into efficient non-interactive zero-knowledge arguments for a designated verifier. Their transformation uses additively homomorphic encryption to encrypt the verifier’s challenge, which the prover uses to compute an encrypted answer. The transformation does not rely on the random oracle model but proving soundness requires a complexity leveraging assumption. We propose an alternative instantiation of their transformation and show that it achieves culpable soundness without complexity leveraging. This improves upon an earlier result by Ventre and Visconti (Africacrypt 2009), who used a different construction which achieved weak culpable soundness. We demonstrate how our construction can be used to prove validity of encrypted votes in a referendum. This yields a voting system with homomorphic tallying that does not rely on the Fiat-Shamir heuristic

Theory of the topological Anderson insulator

We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p^2 sigma_z to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.Comment: 4 pages, 3 figures (updated figures, calculated DOS

Scrutinizing and De-Biasing Intuitive Physics with Neural Stethoscopes

Visually predicting the stability of block towers is a popular task in the domain of intuitive physics. While previous work focusses on prediction accuracy, a one-dimensional performance measure, we provide a broader analysis of the learned physical understanding of the final model and how the learning process can be guided. To this end, we introduce neural stethoscopes as a general purpose framework for quantifying the degree of importance of specific factors of influence in deep neural networks as well as for actively promoting and suppressing information as appropriate. In doing so, we unify concepts from multitask learning as well as training with auxiliary and adversarial losses. We apply neural stethoscopes to analyse the state-of-the-art neural network for stability prediction. We show that the baseline model is susceptible to being misled by incorrect visual cues. This leads to a performance breakdown to the level of random guessing when training on scenarios where visual cues are inversely correlated with stability. Using stethoscopes to promote meaningful feature extraction increases performance from 51% to 90% prediction accuracy. Conversely, training on an easy dataset where visual cues are positively correlated with stability, the baseline model learns a bias leading to poor performance on a harder dataset. Using an adversarial stethoscope, the network is successfully de-biased, leading to a performance increase from 66% to 88%

Switching of electrical current by spin precession in the first Landau level of an inverted-gap semiconductor

We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a one-dimensional pathway. The restriction of the electron motion to a single spatial dimension ensures that all electrons experience the same amount of precession in a parallel magnetic field, so that the full electrical current can be switched on and off. As an example, we calculate the magnetoconductance of a p-n interface in a HgTe quantum well and show how it can be used to measure the spin precession due to bulk inversion asymmetry.Comment: 5 pages, 4 figures, extended versio

Atom Chips: Fabrication and Thermal Properties

Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1$\mu$m. At room temperature, thin wires can carry more than 10$^7$A/cm$^2$ current density and voltages of more than 500V. Extensive test measurements for different substrates and metal thicknesses (up to 5 $\mu$m) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips