Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%

Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters

Structural and electronic properties of Pb1-xCdxTe and Pb1-xMnxTe ternary alloys

A systematic theoretical study of two PbTe-based ternary alloys, Pb1-xCdxTe and Pb1-xMnxTe, is reported. First, using ab initio methods we study the stability of the crystal structure of CdTe - PbTe solid solutions, to predict the composition for which rock-salt structure of PbTe changes into zinc-blende structure of CdTe. The dependence of the lattice parameter on Cd (Mn) content x in the mixed crystals is studied by the same methods. The obtained decrease of the lattice constant with x agrees with what is observed in both alloys. The band structures of PbTe-based ternary compounds are calculated within a tight-binding approach. To describe correctly the constituent materials new tight-binding parameterizations for PbTe and MnTe bulk crystals as well as a tight-binding description of rock-salt CdTe are proposed. For both studied ternary alloys, the calculated band gap in the L point increases with x, in qualitative agreement with photoluminescence measurements in the infrared. The results show also that in p-type Pb1-xCdxTe and Pb1-xMnxTe mixed crystals an enhancement of thermoelectrical power can be expected.Comment: 10 pages, 13 figures, submitted to Physical Review

Determination of Cu Concentrations in CdTe/CdS Devices by High Mass Resolution Secondary Ion Mass Spectrometry

We have used secondary ion mass spectrometry (SIMS) to quantitatively determine the concentration of Cu in CdTe/CdS devices. Empirical standards were fabricated by ion implantation of Cu into single-crystal and polycrystalline CdTe and single-crystal CdS

Investigation of Cd1-XMgxTe Alloys for Tandem Solar Cell Applications: Preprint

Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd1-xMgxTe (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x = 0 to 0.66 were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCl2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance

Cross-Section AFM and EFM Examination of Thin-Film Solar Cells

We demonstrated the feasibility of analyzing cross sections of thin-film CdTe/CdS and CIGS/CdS solar cells using atomic force microscopy (AFM)

Micro-PL Studies of Polycrustalline CdS/CdTe Interfaces

We describe a technique of photoluminescence measurements with a resolutiion of microns. This technique is applied to examine the CdS/CdTe interface of CdTe solar cells

Degradation and Capacitance-Voltage Hysteresis in CdTe Devices: Preprint

CdS/CdTe cells on CTO/ZTO TCO show greater intial performance than SnO2-gased substrates due to superior optical and electrical properties of the oxide layers and more rigorous CdCl2 processing. Performance unfiormity was a problem

Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

This paper describes the large concentration of 60..deg.. twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces