36,138 research outputs found
Electricity Prices, River Temperatures and Cooling Water Scarcity.
Thermal-based power stations rely on water for cooling purposes. These water sources may be subject to incidents of scarcity, environmental regulations and competing economic concerns. This paper analyses the effect of water scarcity and increased river temperatures on German electricity prices from 2002 to 2009. Having controlled for demand effects, the results indicate that the electricity price is significantly impacted by both a change in river temperatures and the relative abundance of river water. An implication is that future climate change will affect electricity prices not only through changes in demand, but also via increased water temperatures and scarcity.Thermal-based power; water scarcity.
Controls on carbon and energy exchange by a black spruce - moss ecosystem: Testing the mathematical model Ecosys with data from the BOREAS experiment
Flight data analysis of power subsystem degradation at near synchronous altitude Quarterly report
Flight data analysis of spacecraft power subsystem degradation at near synchronous altitud
A range expanding signal conditioner
Telemetry system modifications to improve signal resolution are described. Process uses zero suppression technique which consists of subtracting known voltage from input and amplifying remainder. Schematic diagram of circuit is provided and details of operation are presented
Constraints on θ_(13) from a three-flavor oscillation analysis of reactor antineutrinos at KamLAND
We present new constraints on the neutrino oscillation parameters Δm^2_(21), θ_(12), and θ_(13) from a three flavor
analysis of solar and KamLAND data. The KamLAND data set includes data acquired following a radiopurity upgrade and amounts to a total exposure of 3.49 x 10^(32) target-proton-year. Under the assumption of CPT invariance, a two-flavor analysis (θ_(13) = 0) of the KamLAND and solar data yields the best-fit values tan^2θ_(12) = 0.444^(+0.036)_(-0.030) and Δm^2_(21) = 7.50^(+0.19)_(-0.20) x 10^(-5) eV^2; a three-flavor analysis with θ13 as a free parameter yields the best-fit values tan^2θ_(12) = 0.452^(+0.035)_(-0.033), Δm^2_(21) = 7.50^(+0.19)_(-0.20) x 10^(-5) eV^2, and sin^2θ_(13) = 0.020^(+0.016)_(-0.016). This θ_(13) interval is consistent with other recent work combining the CHOOZ, atmospheric and long-baseline accelerator experiments. We also present a new global θ_(13) analysis, incorporating the CHOOZ, atmospheric, and accelerator data, which indicates sin^2θ_(13) = 0.009^(+0.013)-_(0.007). A nonzero value is suggested, but only at the 79% C.L
Optical enhancement of sensitivity in laser Doppler velocity systems
Utilization of optical enhancement techniques prevents loss of light by reflections at the photocathode of a photomultiplier and increases signal detection sensitivity
Measuring unsteady pressure on rotating compressor blades
Miniature semiconductor strain gage pressure transducers mounted in several arrangements were studied. Both surface mountings and recessed flush mountings were tested. Test parameters included mounting arrangement, blade material, temperature, local strain in the acceleration normal to the transducer diaphragm, centripetal acceleration, and pressure. Test results show no failures of transducers or mountings and indicate an uncertainty of unsteady pressure measurement of approximately + or - 6 percent + 0.1 kPa for a typical application. Two configurations were used on a rotating fan flutter program. Examples of transducer data and correction factors are presented
X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface
X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction. Anion
cross-incorporation was measured in 20 Å thick GaSb layers grown on lnAs, and 20 Å thick InAs layers grown on GaSb for cracked and uncracked sources. It was found that significantly
less anion cross-incorporation occurs in structures grown with cracked sources. Interface formation was investigated by studying Sb soaks of InAs surfaces and As soaks of GaSb surfaces
as a function of cracker power and soak time. Exchange of the group V surface atoms was found to be an increasing function of both cracker power and soak time. We find that further
optimization of current growth parameters may be possible by modifying the soak time used at interfaces
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