Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy

We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.Comment: 5 pages, 3 figure

Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases

Scanning-gate-induced effects and spatial mapping of a cavity

Tailored electrostatic potentials are the foundation of scanning gate microscopy. We present several aspects of the tip-induced potential on the two-dimensional electron gas. First, we give methods on how to estimate the size of the tip-induced potential. Then, a ballistic cavity is formed and studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Finally, the effect of electrostatic screening of the metallic top gates is discussed.Comment: 10 pages, 6 figure

Locally induced quantum interference in scanning gate experiments

We present conductance measurements of a ballistic circular stadium influenced by a scanning gate. When the tip depletes the electron gas below, we observe very pronounced and regular fringes covering the entire stadium. The fringes correspond to transmitted modes in constrictions formed between the tip-induced potential and the boundaries of the stadium. Moving the tip and counting the fringes gives us exquisite control over the transmission of these constrictions. We use this control to form a quantum ring with a specific number of modes in each arm showing the Aharonov-Bohm effect in low-field magnetoconductance measurements.Comment: 10 pages, 4 figure

Pattern formation and localization in the forced-damped FPU lattice

We study spatial pattern formation and energy localization in the dynamics of an anharmonic chain with quadratic and quartic intersite potential subject to an optical, sinusoidally oscillating field and a weak damping. The zone-boundary mode is stable and locked to the driving field below a critical forcing that we determine analytically using an approximate model which describes mode interactions. Above such a forcing, a standing modulated wave forms for driving frequencies below the band-edge, while a ``multibreather'' state develops at higher frequencies. Of the former, we give an explicit approximate analytical expression which compares well with numerical data. At higher forcing space-time chaotic patterns are observed.Comment: submitted to Phys.Rev.

Irreversibility on the Level of Single-Electron Tunneling

We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account