We perform scanning-gate microscopy on a quantum-point contact. It is defined
in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs
heterostructure, giving rise to a weak disorder potential. The lever arm of the
scanning tip is significantly smaller than that of the split gates defining the
conducting channel of the quantum-point contact. We are able to observe that
the conducting channel is shifted in real space when asymmetric gate voltages
are applied. The observed shifts are consistent with transport data and
numerical estimations.Comment: 5 pages, 3 figure
