Comment on "Geometrothermodynamics of a Charged Black Hole of String Theory"

We comment on the conclusions found by Larra\~naga and Mojica regarding the consistency of the Geoemtrothermodynamics programme to describe the critical behaviour of a Gibbons-Maeda-Garfinkle-Horowitz-Strominger charged black hole. We argue that making the appropriate choice of metric for the thermodynamic phase space and, most importantly, considering the homogeneity of the thermodynamic potential we obtain consistent results for such a black hole.Comment: Comment on arXiv:1012.207

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixOy are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford backscattering spectroscopy (RBS), heavy ion RBS (HI-RBS), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HR-TEM), and time of flight and dynamic secondary ion mass spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixOy films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSixOyNz films

Diseño e Implementación de Protocolo de Bioseguridad para los Trabajadores de Sur Ambiental S.A.S para la Prevención, Mitigación y Preparación como Respuesta a la Emergencia Presentada por el COVID -19

La presente investigación se realiza en las instalaciones de la empresa Sur Ambiental S.A.S, ubicada en la ciudad de Florencia del departamento del Caquetá, con el objetivo de diseñar e implementar un protocolo de bioseguridad para la prevención, mitigación y preparación como respuesta a la emergencia presentada por el COVID-19, como mecanismo para salvaguardar la integridad física y garantizar un ambiente sano para el desarrollo de las actividades de la organización, basado en el autocuidado y el cuidado socialmente responsable. Se desarrolló bajo un método de investigación mixto de tipo exploratorio – descriptivo con el fin de abarcar un problema desconocido y dar respuesta inmediata al mismo. Como resultado se evidencia el anexo 1 como documentación de un protocolo de bioseguridad y las pautas para su implementación en la parte administrativa y operativa de las actividades estratégicas y misionales de la empresa, buscando articular los diferentes procesos a las recomendaciones de salud dadas a nivel nacional e internacional y condensadas en el protocolo de la organización. Se concluye que el diseño de un protocolo de bioseguridad es imperativo frente a la situación afrontada por la emergencia sanitaria provocada por la pandemia del COVID-19, además de que el compromiso de la alta gerencia en su implementación garantizó la adecuada disposición y transición al cambio debido a los ajustes en los procedimientos y procesos que permiten mitigar y controlar la transmisión del virus.This research is carried out at the facilities of the company Sur Ambiental S.A.S in the city of Florencia in the department of Caquetá with the aim of designing and implementing a biosafety protocol for prevention, mitigation and preparedness in response to the emergency presented by COVID -19, as a mechanism to safeguard physical integrity and guarantee a healthy environment for the development of the organization's activities based on self-care and socially responsible care, was developed under a mixed exploratory-descriptive research method with the aim of to cover an unknown problem and provide an immediate response to it, as a result, Annex 1 is evidenced as documentation of a biosafety protocol and the guidelines for its implementation in the administrative and operational part of the strategic and missionary activities of the company, seeking to articulate the different processes to the health recommendations given to national and international level and condensed in the protocol of the organization. It is concluded that the design of a biosafety protocol is imperative in the face of the situation faced by the health emergency caused by the COVID-19 pandemic, in addition to the commitment of senior management in its implementation guaranteed the adequate disposition and transition to change It was due to adjustments in procedures and processes that allow mitigating and controlling the transmission of the virusResumen 5 Abstract 6 Introducción 7 1. Problema de Investigación 14 1.1 Descripción del problema 14 1.2 Formulación del problema 16 2. Objetivos 17 2.1 Objetivo General 17 2.2 Objetivos Específicos 17 3. Justificación 18 4. Delimitación 21 5. Limitaciones 22 6. Marco de Referencia 23 6.1. Contexto 23 6.1.1. Las pandemias en la historia 23 6.1.2 El COVID -19 en Colombia 28 6.1.3 El COVID-19 y las empresas 33 6.2 Fundamentos Teóricos 34 6.2.1 Bioseguridad 34 6.2.3. Estrés laboral 36 6.2.4. Aislamiento 36 6.2.5 Asepsia 36 6.2.6. COVID-19 37 6.3 Estado del arte. 38 6.3.1 Tesis Internacionales 38 6.3.2 Tesis Nacionales 43 6.4. Marco legal 45 6.4.1 Normatividad Internacional 45 6.4.2 Normatividad Nacional 46 7. Marco Metodológico 49 7.1 Tipo de Investigación y Enfoque Metodológico 49 7.2 Población y Muestra 49 7.2.1 Población 50 7.2.2 Materiales 50 7.3 fases del estudio 51 7.4 Recolección de la información 53 7.4.1 Fuentes de información primarias: 53 7.4.2 Fuentes de información secundaria: 53 8. Resultados 54 8.1 Análisis de direccionamiento de la organización 54 8.1.1 Misión 54 8.1.2 Visión 54 8.1.3 Organigrama 55 8.1.4 Responsabilidades y Autoridades 56 8.1.5 Mapa De Procesos 57 8.1.6 Análisis DOFA 57 8.1.7 Identificación y manejo del riesgo en la organización 60 8.2 Protocolo de bioseguridad de la empresa Sur Ambiental S.A.S 62 8.3 Diagrama de Gantt de Ejecución del Proyecto. 63 9. Análisis financiero 64 10. Conclusiones 66 11. Recomendaciones 68 12. Bibliografía 69 13. Anexos 71EspecializaciónEspecialización en Gerencia de la Seguridad y Salud en el trabaj

Relatively low-temperature processing and its impact on device performance and reliability

Non-silicon, large-area/flexible electronics for the internet of things (IoT) has acquired substantial attention in recent years. Key electron devices to enable this technology include metal-oxide-semiconductor field effect transistors (MOSFETs), where ultra-thin and/or low-dimensional (i.e., 2D to a few layers) semiconductor materials may be required, like those found in thin-film transistors (TFTs) and transition metal dichalcogenide (TMD) FETs [1,2]. Whether TFT or TMDFET, a relatively low-temperature process commensurate with large-area/flex applications to enable large (i.e., greater than 300 mm) and/or flexible substrate fabrication is required. Furthermore, TMD materials may be implemented as the channel semiconductor to function as an ultra-thin body to mitigate short channel effects and extend further scaling as the future progresses in CMOS scaling. In addition, the gate dielectric insulator is another vital component of any MOSFET that requires investigation as part of the MOS stack in these types of transistors. Lastly, semiconductor materials mentioned herein do not have a universally accepted way to introduce dopants to form sources and drains. Thus, metal-semiconductor contacts are employed where the interface region of the contact plays a critical role in determining the conductivity/resistivity of the contact. Moreover, how the metal-semiconductor interface are formed also impacts the quality of the contact. Therefore, exploration of low-temperature processing, interfaces, and their impact on device performance and reliability will be critical to eventual implementation in future technologies. To ascertain the impact of low-temperature fabrication and critical interfaces, several process approaches and electrical characterization methods were employed [1-6]. In one case, for a TMD FET contact study, an oxygen plasma exposure in the contact region on MoS2 (a TMD material) is done prior to titanium deposition. The results demonstrate that contaminants and photoresist residue that still reside after development can noticeably impact electrical performance (Fig. 1). The O2 plasma removes the residue present at the surface of MoS2 without the use of a high temperature anneal, and subsequently improves the device performance significantly (Fig. 1) [1]. In another case, for a MOS-based TFT study, an investigation of low-temperature (\u3e 115°C) deposited zinc-based semiconductors was executed (Fig. 2). For ZnO and IGZO, saturation mobilities of 14.4 and 8.4 cm2/V-s, along with threshold voltages of 2.2 V and 2.0 V were obtained, respectively, demonstrating robust devices that also have an on/off ratio \u3e 108, with IOFF lower than 10-12 A. Furthermore, a hot carrier stress methodology demonstrated threshold voltage (VTH) shifts of 0.4 V and 1.8 V for ZnO and IGZO, respectively, after stress (Fig. 2) [2]. Continued research is required to ascertain the electrically active defects responsible for the VTH shift. Please click Additional Files below to see the full abstract