Aberration-corrected scanning transmission electron microscopy for atomic-resolution studies of functional oxides

Electron microscopy has undergone a major revolution in the past few years because of the practical implementation of correctors for the parasitic lens aberrations that otherwise limit resolution. This has been particularly significant for scanning transmission electron microscopy (STEM) and now allows electron beams to be produced with a spot size of well below 1 Å, sufficient to resolve inter-atomic spacings in most crystal structures. This means that the advantages of STEM, relatively straightforward interpretation of images and highly localised analysis through electron energy-loss spectroscopy, can now be applied with atomic resolution to all kinds of materials and nanostructures. As this review shows, this is revolutionising our understanding of functional oxide ceramics, thin films, heterostructures and nanoparticles. This includes quantitative analysis of structures with picometre precision, mapping of electric polarisation at the unit cell scale, and mapping of chemistry and bonding on an atom-by-atom basis. This is also now providing the kind of high quality data that are very complementary to density functional theory (DFT) modelling, and combined DFT/microscopy studies are now providing deep insights into the structure and electronic structure of oxide nanostructures. Finally, some suggestions are made as to the prospects for further advances in our atomistic understanding of such materials as a consequence of recent technical advances in spectroscopy and imaging

The atomic structure and chemistry of Fe-rich steps on antiphase boundaries in Ti-doped Bi_0.9Nd_0.15FeO3

Stepped antiphase boundaries are frequently observed in Ti-doped Bi<sub>0.85</sub>Nd<sub>0.15</sub>FeO<sub>3</sub>, related to the novel planar antiphase boundaries reported recently. The atomic structure and chemistry of these steps are determined by a combination of high angle annular dark field and bright field scanning transmission electron microscopy imaging, together with electron energy loss spectroscopy. The core of these steps is found to consist of 4 edge-sharing FeO<sub>6</sub> octahedra. The structure is confirmed by image simulations using a frozen phonon multislice approach. The steps are also found to be negatively charged and, like the planar boundaries studied previously, result in polarisation of the surrounding perovskite matrix

Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene

Atomic resolution high angle annular dark field imaging of suspended, single-layer graphene, onto which the metals Cr, Ti, Pd, Ni, Al and Au atoms had been deposited was carried out in an aberration corrected scanning transmission electron microscope. In combination with electron energy loss spectroscopy, employed to identify individual impurity atoms, it was shown that nano-scale holes were etched into graphene, initiated at sites where single atoms of all the metal species except for gold come into close contact with the graphene. The e-beam scanning process is instrumental in promoting metal atoms from clusters formed during the original metal deposition process onto the clean graphene surface, where they initiate the hole-forming process. Our observations are discussed in the light of calculations in the literature, predicting a much lowered vacancy formation in graphene when metal ad-atoms are present. The requirement and importance of oxygen atoms in this process, although not predicted by such previous calculations, is also discussed, following our observations of hole formation in pristine graphene in the presence of Si-impurity atoms, supported by new calculations which predict a dramatic decrease of the vacancy formation energy, when SiOx molecules are present.Comment: final version accepted in ACS Nano + supplementary info. 22+6 pages, 4+5 figure

Self-Nano-Structuring in SrTiO₃: A Novel Strategy for Enhancement of Thermoelectric Response in Oxides

Nanostructuring is recognized as an efficient route for enhancing thermoelectric response. Here, we report a new synthesis strategy for nanostructuring oxide ceramics and demonstrate its effectiveness on an important n-type thermoelectric SrTiO3. Ceramics of Sr0.9La0.1TiO3 with additions of B2O3 were synthesized by the mixed oxide route. Samples were sintered in air followed by annealing in a reducing atmosphere. Crystallographic data from X-ray and electron diffraction showed Pm3̅m cubic symmetry for all the samples. High-resolution transmission electron microscopy (HRTEM) showed the formation of a core–shell type structure within the grains for the annealed ceramics. The cores contain nanosize features comprising pairs of nanosize voids and particles; the feature sizes depend on annealing time. Atomic-resolution, high-angle annular-dark-field imaging and electron energy loss spectroscopy in the scanning transmission electron microscopy (STEM-HAADF-EELS) showed the particles to be rich in Ti and the areas around the voids to contain high concentrations of Ti3+. Additionally, dislocations were observed, with significantly higher densities in the shell areas. The observed dislocations are combined (100) and (110) edge dislocations. The major impact of the core–shell type microstructures, with nanosize inclusions, is the reduction of the thermal conductivity. Sr0.9La0.1TiO3 ceramics containing grain boundary shells of size ≈ 1 μm and inclusions in the core of 60–80 nm exhibit a peak power factor of 1600 μW/m·K2 at 540 K; at 1000 K, they exhibit a low thermal conductivity (2.75 W/m·K) and a power factor of 1050 μW/m·K2 leading to a high of ZT of 0.39 ± 0.03. This is the highest ZT reported so far for Sr0.9La0.1TiO3 based-compositions. This nanostructuring strategy should be readily applicable to other functional oxides

Functionalization of graphene at the organic/water interface

A simple method for the deposition of noble metal (Pd, Au) nanoparticles on a free-standing chemical vapour deposited graphene (CVD GR) monolayer is reported. The method consists of assembling the high purity CVD GR, by transfer from poly (methyl methacrylate) (PMMA), at the organic/water interface. Metal deposition can then proceed using either spontaneous or electrochemically-controlled processes. The resultant graphene-based metal nanoclusters are characterized using atomic force and electron microscopy techniques, and the location of the nanostructures underneath the graphene layer is determined from the position and the intensity changes of the Raman bands (D, G, 2D). This novel process for decoration of a single-layer graphene sheet with metal nanoparticles using liquid/liquid interfaces opens an alternative and useful way to prepare low dimensional carbon-based nanocomposites and electrode materials

Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires

Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst-ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal-semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal-nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal-support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au-nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I-V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I-V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au-nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au-nanowire systems cannot presently deliver

Accurate EELS background subtraction – an adaptable method in MATLAB

Electron energy-loss spectroscopy (EELS) is a technique that can give useful information on elemental composition and bonding environments. However in practice, the complexity of the background contributions, which can arise from multiple sources, can hamper the interpretation of the spectra. As a result, background removal is both an essential and difficult part of EELS analysis, especially during quantification of elemental composition. Typically, a power law is used to fit the background but this is often not suitable for many spectra such as in the low-loss region (< 50 eV) and when there are overlapping EELS edges. In this article, we present a series of scripts written in MATLAB v. R2019b that aims to provide statistical information on the model used to fit the background, allowing the user to determine the accuracy of background subtraction. The scripts were written for background subtraction of vibrational EELS in the ultralow-loss region near the zero-loss peak but can also be applied to other kinds of EEL spectra. The scripts can use a range of models for fitting, provided by the Curve Fitting Toolbox of MATLAB, and the user is able to precisely define the window for fitting as well as for edge integration. We demonstrate the advantages of using these scripts by comparing their background subtraction of example spectra to the most commonly used software, Gatan Microscopy Suite 3. The example spectra include those containing multiple scattering, multiple overlapping peaks, as well as vibrational EELS. Additionally, a comprehensive guide to using the scripts has been included in the Supplementary Information

Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires

Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties