Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10⁵, low-voltage operation, and good mobility of ∼15.03 cm² V^–1s^–1. These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics

Room-Temperature Pressure Synthesis of Layered Black Phosphorus–Graphene Composite for Sodium-Ion Battery Anodes

Sodium-ion batteries offer an attractive option for grid-level energy storage due to the high natural abundance of sodium and low material cost of sodium compounds. Phosphorus (P) is a promising anode material for sodium-ion batteries, with a theoretical capacity of 2596 mAh/g. The red phosphorus (RP) form has worse electronic conductivity and lower initial Coulombic efficiency than black phosphorus (BP), but high material cost and limited production capacity have slowed the development of BP anodes. To address these challenges, we have developed a simple and scalable method to synthesize layered BP/graphene composite (BP/rGO) by pressurization at room temperature. A carbon-black-free and binder-free BP/rGO anode prepared with this method achieved specific charge capacities of 1460.1, 1401.2, 1377.6, 1339.7, 1277.8, 1123.78, and 720.8 mAh/g in a rate capability test at charge and discharge current densities of 0.1, 0.5, 1, 5, 10, 20, and 40 A/g, respectively. In a cycling performance test, after 500 deep cycles, the capacity of BP/rGO anodes stabilized at 1250 and 640 mAh/g at 1 and 40 A/g, respectively, which marks a significant performance improvement for sodium-ion battery anodes

Highly Sensitive and Wearable In₂O₃ Nanoribbon Transistor Biosensors with Integrated On-Chip Gate for Glucose Monitoring in Body Fluids

Nanoribbon- and nanowire-based field-effect transistor (FET) biosensors have stimulated a lot of interest. However, most FET biosensors were achieved by using bulky Ag/AgCl electrodes or metal wire gates, which have prevented the biosensors from becoming truly wearable. Here, we demonstrate highly sensitive and conformal In₂O₃ nanoribbon FET biosensors with a fully integrated on-chip gold side gate, which have been laminated onto various surfaces, such as artificial arms and watches, and have enabled glucose detection in various body fluids, such as sweat and saliva. The shadow-mask-fabricated devices show good electrical performance with gate voltage applied using a gold side gate electrode and through an aqueous electrolyte. The resulting transistors show mobilities of ∼22 cm² V^–1 s^–1 in 0.1× phosphate-buffered saline, a high on–off ratio (10⁵), and good mechanical robustness. With the electrodes functionalized with glucose oxidase, chitosan, and single-walled carbon nanotubes, the glucose sensors show a very wide detection range spanning at least 5 orders of magnitude and a detection limit down to 10 nM. Therefore, our high-performance In₂O₃ nanoribbon sensing platform has great potential to work as indispensable components for wearable healthcare electronics

Highly Sensitive and Quick Detection of Acute Myocardial Infarction Biomarkers Using In₂O₃ Nanoribbon Biosensors Fabricated Using Shadow Masks

We demonstrate a scalable and facile lithography-free method for fabricating highly uniform and sensitive In₂O₃ nanoribbon biosensor arrays. Fabrication with shadow masks as the patterning method instead of conventional lithography provides low-cost, time-efficient, and high-throughput In₂O₃ nanoribbon biosensors without photoresist contamination. Combined with electronic enzyme-linked immunosorbent assay for signal amplification, the In₂O₃ nanoribbon biosensor arrays are optimized for early, quick, and quantitative detection of cardiac biomarkers in diagnosis of acute myocardial infarction (AMI). Cardiac troponin I (cTnI), creatine kinase MB (CK-MB), and B-type natriuretic peptide (BNP) are commonly associated with heart attack and heart failure and have been selected as the target biomarkers here. Our approach can detect label-free biomarkers for concentrations down to 1 pg/mL (cTnI), 0.1 ng/mL (CK-MB), and 10 pg/mL (BNP), all of which are much lower than clinically relevant cutoff concentrations. The sample collection to result time is only 45 min, and we have further demonstrated the reusability of the sensors. With the demonstrated sensitivity, quick turnaround time, and reusability, the In₂O₃ nanoribbon biosensors have shown great potential toward clinical tests for early and quick diagnosis of AMI

Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed electronics due to their advantageous electrical and mechanical properties, intrinsic printability in solution, and desirable stability in air. However, fully printed, large-area, high-performance, and flexible carbon nanotube active-matrix backplanes are still difficult to realize for future displays and sensing applications. Here, we report fully screen-printed active-matrix electrochromic displays employing carbon nanotube thin-film transistors. Our fully printed backplane shows high electrical performance with mobility of 3.92 ± 1.08 cm² V^–1 s^–1, on–off current ratio <i>I</i>_on/<i>I</i>_off ∼ 10⁴, and good uniformity. The printed backplane was then monolithically integrated with an array of printed electrochromic pixels, resulting in an entirely screen-printed active-matrix electrochromic display (AMECD) with good switching characteristics, facile manufacturing, and long-term stability. Overall, our fully screen-printed AMECD is promising for the mass production of large-area and low-cost flexible displays for applications such as disposable tags, medical electronics, and smart home appliances

Red Phosphorus Nanodots on Reduced Graphene Oxide as a Flexible and Ultra-Fast Anode for Sodium-Ion Batteries

Sodium-ion batteries offer an attractive option for potential low cost and large scale energy storage due to the earth abundance of sodium. Red phosphorus is considered as a high capacity anode for sodium-ion batteries with a theoretical capacity of 2596 mAh/g. However, similar to silicon in lithium-ion batteries, several limitations, such as large volume expansion upon sodiation/desodiation and low electronic conductance, have severely limited the performance of red phosphorus anodes. In order to address the above challenges, we have developed a method to deposit red phosphorus nanodots densely and uniformly onto reduced graphene oxide sheets (P@RGO) to minimize the sodium ion diffusion length and the sodiation/desodiation stresses, and the RGO network also serves as electron pathway and creates free space to accommodate the volume variation of phosphorus particles. The resulted P@RGO flexible anode achieved 1165.4, 510.6, and 135.3 mAh/g specific charge capacity at 159.4, 31878.9, and 47818.3 mA/g charge/discharge current density in rate capability test, and a 914 mAh/g capacity after 300 deep cycles in cycling stability test at 1593.9 mA/g current density, which marks a significant performance improvement for red phosphorus anodes for sodium-ion chemistry and flexible power sources for wearable electronics

Carbon Nanotube Macroelectronics for Active Matrix Polymer-Dispersed Liquid Crystal Displays

Active matrix liquid crystal display (AMLCD) is the most widely used display technology nowadays. Transparent display is one of the emerging technologies to provide people with more features such as displaying images on transparent substrates and simultaneously enabling people to see the scenery behind the panel. Polymer-dispersed liquid crystal (PDLC) is a possible active matrix transparent display technology due to its high transparency, good visibility, and low power consumption. Carbon nanotubes (CNTs) with excellent mobility, high transparency, and room-temperature processing compatibility are ideal materials for the driver circuit of the PDLC display. Here, we report the monolithic integration of CNT thin-film transistor driver circuit with PDLC pixels. We studied the transmission properties of the PDLC pixels and characterized the performance of CNT thin-film transistors. Furthermore, we successfully demonstrated active matrix seven-segment PDLC displays using CNT driver transistors. Our achievements open up opportunities for future nanotube-based, flexible thin-film transparent display electronics

High-Performance Sub-Micrometer Channel WSe₂ Field-Effect Transistors Prepared Using a Flood–Dike Printing Method

Printing technology has potential to offer a cost-effective and scalable way to fabricate electronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, limited by the registration accuracy and resolution of printing, the previously reported printed TMDC field-effect transistors (FETs) have relatively long channel lengths (13–200 μm), thus suffering low current-driving capabilities (≤0.02 μA/μm). Here, we report a “flood–dike” self-aligned printing technique that allows the formation of source/drain metal contacts on TMDC materials with sub-micrometer channel lengths in a reliable way. This self-aligned printing technique involves three steps: (i) printing of gold ink on a WSe₂ flake to form the first gold electrode, (ii) modifying the surface of the first gold electrode with a self-assembled monolayer (SAM) to lower the surface tension and render the surface hydrophobic, and (iii) printing of gold ink close to the SAM-treated first electrode at a certain distance. During the third step, the gold ink would first spread toward the edge of the first electrode and then get stopped by the hydrophobic SAM coating, ending up forming a sub-micrometer channel. With this printing technique, we have successfully downscaled the channel length to ∼750 nm and achieved enhanced on-state current densities of ∼0.64 μA/μm (average) and high on/off current ratios of ∼3 × 10⁵ (average). Furthermore, with our high-performance printed WSe₂ FETs, driving capabilities for quantum-dot light-emitting diodes (LEDs), inorganic LEDs, and organic LEDs have been demonstrated, which reveals the potential of using printed TMDC electronics for display backplane applications