23,417 research outputs found
Periodicities in Solar Coronal Mass Ejections
Mid-term quasi-periodicities in solar coronal mass ejections (CMEs) during
the most recent solar maximum cycle 23 are reported here for the first time
using the four-year data (February 5, 1999 to February 10, 2003) of the Large
Angle Spectrometric Coronagraph (LASCO) onboard the Solar and Heliospheric
Observatory (SOHO). In parallel, mid-term quasi-periodicities in solar X-ray
flares (class >M5.0) from the Geosynchronous Operational Environment Satellites
(GOES) and in daily averages of Ap index for geomagnetic disturbances from the
World Data Center (WDC) at the International Association for Geomagnetism and
Aeronomy (IAGA) are also examined for the same four-year time span. Several
conceptual aspects of possible equatorially trapped Rossby-type waves at and
beneath the solar photosphere are discussed.Comment: Accepted by MNRAS, 6 figure
Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals
Atomically thin MoS crystals have been recognized as a quasi-2D
semiconductor with remarkable physics properties. This letter reports our Raman
scattering measurements on multilayer and monolayer MoS, especially in
the low-frequency range (50 cm). We find two low-frequency Raman
modes with contrasting thickness dependence. With increasing the number of
MoS layers, one shows a significant increase in frequency while the other
decreases following a 1/N (N denotes layer-number) trend. With the aid of
first-principle calculations we assign the former as the shear mode
and the latter as the compression vibrational mode. The opposite
evolution of the two modes with thickness demonstrates novel vibrational modes
in atomically thin crystal as well as a new and more precise way to
characterize thickness of atomically thin MoS films. In addition, we
observe a broad feature around 38 cm (~5 meV) which is visible only
under near-resonance excitation and pinned at the fixed energy independent of
thickness. We interpret the feature as an electronic Raman scattering
associated with the spin-orbit coupling induced splitting in conduction band at
K points in their Brillouin zone.Comment: 5 pages, 4 figure
Comparison of constraint-handling techniques for metaheuristic optimization
Many design problems in engineering have highly nonlinear constraints and the proper handling of such constraints can be important to ensure solution quality. There are many different ways of handling constraints and different algorithms for optimization problems, which makes it difficult to choose for users. This paper compares six different constraint-handling techniques such as penalty methods, barrier functions, epsilon-constrained method, feasibility criteria and stochastic ranking. The pressure vessel design problem is solved by the flower pollination algorithm, and results show that stochastic ranking and epsilon-constrained method are most effective for this type of design optimization
Histone methylation marks play important roles in predicting the methylation status of CpG islands
The methylation status of CpG islands is highly correlated with gene expression. Current methods for computational prediction of DNA methylation only utilize DNA sequence features. In this study, besides 35 DNA sequence features, we added four histone methylation marks to predict the methylation status of CpG islands, and improved the accuracy to 89.94%. Also we applied our model to predict the methylation pattern of all the CpG islands in the human genome, and the results are consistent with the previous reports. Our results imply the important roles of histone methylation marks in affecting the methylation status of CpG islands. H3K4me enriched in the methylation-resistant CpG islands could disrupt the contacts between nucleosomes, unravel chromatin and make DNA sequences accessible. And the established open environment may be a prerequisite for or a consequence of the function implementation of zinc finger proteins that could protect CpG islands from DNA methylation. © 2008 Elsevier Inc. All rights reserved
Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
We report on realization and transport spectroscopy study of single quantum
dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The
nanowires employed are 50-80 nm in diameter and the QDs are defined in the
nanowires between the source and drain contacts on a Si/SiO substrate. We
show that highly tunable QD devices can be realized with the MBE-grown InSb
nanowires and the gate-to-dot capacitance extracted in the many-electron
regimes is scaled linearly with the longitudinal dot size, demonstrating that
the devices are of single InSb nanowire QDs even with a longitudinal size of
~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved
and the Land\'e g-factors extracted for the quantum levels from the
magnetotransport measurements are found to be strongly level-dependent and
fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted
from the magnetic field evolutions of a ground state and its neighboring
excited state in an InSb nanowire QD and is on the order of ~300 eV. Our
results establish that the MBE-grown InSb nanowires are of high crystal quality
and are promising for the use in constructing novel quantum devices, such as
entangled spin qubits, one-dimensional Wigner crystals and topological quantum
computing devices.Comment: 19 pages, 5 figure
Oxidative stress-mediated reperfusion injury: mechanism and therapies
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