PTCR effect in La2CO3 doped BaTiO2 ceramic sensors

The positive temperature coefficient of resistivity (PTCR) sensors is resistor materials that undergo a sharp change in resistivity at a designed Curie temperature due to its unique structure and chemical composition. This effect serves important control functions in a wide variety of electronic circuitry and similar applications. Conventional calcining of mixed oxides method (CMO) is used for fabricating lanthanum doped barium titanate (BaTiO3) for PTCR behaviour through solid-state-sintering route, at 1100°C, 1350°C. Two batches of samples were fabricated at low and high sintering temperatures of 1100°C, 1350°C respectively. The effect of different concentrations of donor dopant on BaTiO3 on the electrical properties of Ba(1-x)LaxTiO3 with x= 0.0005, 0.001, 0.002, 0.0025, 0.003 mol%, is investigated at low sintering temperature. The influence of lantanum doping with Al2O3+SiO2+TiO2 (AST) as sintering aids on the electrical properties of Ba(1-x)LaxTiO3 with x= 0.0005, 0.001, 0.003 mol%, is also investigated. The results of the electrical characterization for the first batch of samples showed an increase in room temperature resistance with increaisng donor concentration. Also the results of the electrical characterization for the second batch of samples also showed the same increase in room temperature resistance with increasing donor concentration. For first batch of sensors the high room temperature resistance keeps the jump small and these materials showed V-shaped NTCR-PTCR multifunctional cryogenic sensor behavior with a strong negative coefficient of resistance effect at room temperature.Where as the second batch of sensors showed few orders of magnitude rise in resistivity values. The La-doped BaTiO3 ceramics co-doped with Mn gives an enhanced PTCR effect which can be exploited for various sensor applications

Magnetic and magnetoelectric properties of aurivilliusthree- and four-layered intergrowth ceramics

In this work, we have prepared intergrowth of multiferroic compounds namely Bi4RTi3Fe0.7Co0.3O15-Bi3RTi2Fe0.7Co0.3O12 (BRTFCO15-BRTFCO12) (rare earth (R) = Dy, Sm, La) by solid-state reaction method. From the X-ray diffraction Rietveld refinement, the structure of the intergrowths was found to be orthorhombic in which satisfactory fittings establish the existence of three-layered (space group: b 2 c b) and four-layered compounds (space group: A21am). Analysis of magnetic measurements confirmed a larger magnetization for theSm-modified intergrowth compound (BSTFCO15-BSTFCO12) compared to Dy- and La-doped ones. The emergence of higher magnetic properties can be due to distortion in the unit cell when some Bi3+ ions are replaced with the Sm3+, bonding of Fe3+-O-Co3+ as well as a possible mixture of FexCoy-type nanoparticles that are formed generally in the synthesis of intergrowths. The changes in the magnetic state of the Aurivillius intergrowths have been reflected in the magnetoelectric (ME) coupling: higher ME coefficient (~30 mV/Cm-Oe) at lower magnetic fields and is constant up to 3 kOe. The results were corroborated by Raman spectroscopy and variation of temperature with magnetization data. The results revealed that the RE-modified intergrowth route is an effective preparative method for higher-layer Aurivillius multiferroic ceramics.publishe

PTCR effect in La2CO3 doped BaTiO2 ceramic sensors

The positive temperature coefficient of resistivity (PTCR) sensors is resistor materials that undergo a sharp change in resistivity at a designed Curie temperature due to its unique structure and chemical composition. This effect serves important control functions in a wide variety of electronic circuitry and similar applications. Conventional calcining of mixed oxides method (CMO) is used for fabricating lanthanum doped barium titanate (BaTiO3) for PTCR behaviour through solid-state-sintering route, at 1100°C, 1350°C. Two batches of samples were fabricated at low and high sintering temperatures of 1100°C, 1350°C respectively. The effect of different concentrations of donor dopant on BaTiO3 on the electrical properties of Ba(1-x)LaxTiO3 with x= 0.0005, 0.001, 0.002, 0.0025, 0.003 mol%, is investigated at low sintering temperature. The influence of lantanum doping with Al2O3+SiO2+TiO2 (AST) as sintering aids on the electrical properties of Ba(1-x)LaxTiO3 with x= 0.0005, 0.001, 0.003 mol%, is also investigated. The results of the electrical characterization for the first batch of samples showed an increase in room temperature resistance with increaisng donor concentration. Also the results of the electrical characterization for the second batch of samples also showed the same increase in room temperature resistance with increasing donor concentration. For first batch of sensors the high room temperature resistance keeps the jump small and these materials showed V-shaped NTCR-PTCR multifunctional cryogenic sensor behavior with a strong negative coefficient of resistance effect at room temperature.Where as the second batch of sensors showed few orders of magnitude rise in resistivity values. The La-doped BaTiO3 ceramics co-doped with Mn gives an enhanced PTCR effect which can be exploited for various sensor applications

Crystal structure, dielectric, ferroelectric and energy storage properties of La-doped BaTiO3 semiconducting ceramics

Polycrystalline La-doped BaTiO3 (Ba(1-x)Lax TiO3) [x=0,0.0005,0.001,0.003] ceramics (denoted as BTO,BLT1,BLT2,BLT3) were synthesized by conventional solid-state reaction method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. XRD and Raman spectra revealed single-phase tetragonal perovskite crystalline structure. Well-saturated polarization–electric field (P–E) hysteresis loops were observed with the measurement frequency of 50 Hz at room temperature and confirmed ferroelectric nature of these ceramics and a high recoverable electrical energy storage density of 0.350 J/cm3 with energy efficiency (n)∼9%, which is useful in energy storage capacitor applications. Dielectric studies revealed anomalies around 415–420 K and near the Curie temperature. The latter is attributed to the ferroelectric to paraelectric phase transition. Better dielectric performances were obtained for La-doped samples sintered at 1350°C for 4 h. Grain growth is inhibited with lanthanum (La) incorporation into the BTO lattice. Room temperature semiconducting behavior with positive temperature coefficient of resistivity (PTCR) behavior at TC is attributed to electron compensation mechanism

Low temperature sintered giant dielectric permittivity CaCu3Ti4O12 sol-gel synthesized nanoparticle capacitors

This paper reports on synthesis of polycrystalline complex perovskite CaCu3Ti4O12 (as CCTO) ceramic powders prepared by a sol–gel auto combustion method at different sintering temperatures and sintering times, respectively. The effect of sintering time on the structure, morphology, dielectric and electrical properties of CCTO ceramics is investigated. Tuning the electrical properties via different sintering times is demonstrated for ceramic samples. X-ray diffraction (XRD) studies confirm perovskite-like structure at room temperature. Abnormal grain growth is observed for ceramic samples. Giant dielectric permittivity was realized for CCTO ceramics. High dielectric permittivity was attributed to the internal barrier layer capacitance (IBLC) model associated with the Maxwell–Wagner (MW) polarization mechanism

Low-Temperature Magnetic and Magnetocaloric Properties of Manganese-Substituted Gd_0.5Er_0.5CrO₃ Orthochromites

Rare-earth chromites have been envisioned to replace gas-based refrigeration technology because of their promising magnetocaloric properties at low temperatures, especially in the liquid helium temperature range. Here, we report the low-temperature magnetic and magnetocaloric properties of Gd0.5Er0.5Cr1−xMnxO3 (x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5) rare-earth orthochromites. The Néel transition temperature (TN) was suppressed from 144 K for Gd0.5Er0.5CrO3 to 66 K for the Gd0.5Er0.5Cr0.5Mn0.5O3 compound. Furthermore, magnetization reversal was observed in the magnetization versus temperature behavior of the Gd0.5Er0.5Cr0.6Mn0.4O3 and Gd0.5Er0.5Cr0.5Mn0.5O3 compounds at 100 Oe applied magnetic field. The magnetic entropy change (−∆S) value varied from 16.74 J/kg-K to 7.46 J/kg-K, whereas the relative cooling power (RCP) ranged from 375.94 J/kg to 220.22 J/kg with a Mn ion concentration at 5 T field and around 7.5 K temperature. The experimental results were substantiated by a theoretical model. The present values of the magnetocaloric effect are higher than those of many undoped chromites, manganites and molecular magnets in the liquid helium temperature range

Low-Temperature Magnetic and Magnetocaloric Properties of Manganese-Substituted Gd0.5Er0.5CrO3 Orthochromites

Rare-earth chromites have been envisioned to replace gas-based refrigeration technology because of their promising magnetocaloric properties at low temperatures, especially in the liquid helium temperature range. Here, we report the low-temperature magnetic and magnetocaloric properties of Gd0.5Er0.5Cr1−xMnxO3 (x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5) rare-earth orthochromites. The Néel transition temperature (TN) was suppressed from 144 K for Gd0.5Er0.5CrO3 to 66 K for the Gd0.5Er0.5Cr0.5Mn0.5O3 compound. Furthermore, magnetization reversal was observed in the magnetization versus temperature behavior of the Gd0.5Er0.5Cr0.6Mn0.4O3 and Gd0.5Er0.5Cr0.5Mn0.5O3 compounds at 100 Oe applied magnetic field. The magnetic entropy change (−∆S) value varied from 16.74 J/kg-K to 7.46 J/kg-K, whereas the relative cooling power (RCP) ranged from 375.94 J/kg to 220.22 J/kg with a Mn ion concentration at 5 T field and around 7.5 K temperature. The experimental results were substantiated by a theoretical model. The present values of the magnetocaloric effect are higher than those of many undoped chromites, manganites and molecular magnets in the liquid helium temperature range

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba 0.50

Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM) technique has been employed to acquire out-of-plane (OPP) piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors