Taking piezoelectric microsystems from the laboratory to production

Reliable integration of piezoelectric thin films into silicon-based microsystems on an industrial scale is a key enabling technology for a wide range of future products. However, current knowledge in the field is mostly limited to the conditions and scale of academic laboratories. Thus, knowledge on performance, reliability and reproducibility of the films and methods at industrial level is scarce. The present study intends to contribute to the development of reliable technology for integration of piezoelectric thin films into MEMS on an industrial scale. A test wafer design that contained more than 500 multimorph cantilevers, bridges and membranes in the size range between 50 and 1,500 μm was developed. The active piezoelectric material was a ∼2 μm thin film of lead zirconate titanate (PZT) deposited by a state-of-the-art chemical solution deposition (CSD) procedure. Automated measurements of C(V) and dielectric dissipation factor at 1 kHz were made on more than 200 devices at various locations across the wafer surface. The obtained standard deviations were 4.5 and 11% for the permittivity and dissipation factor, respectively. Values for the transverse piezoelectric charge coefficient, e 31,f, of up to −15.1 C/m2 were observed. Fatigue tests with a 5 kHz signal applied to a typical cantilever at ± 25 V led to less than 10% reduction of the remanent polarisation after 2 × 107 bipolar cycles. Cantilever out-of-plane deflection at zero field measured after poling was less than 1.1% for a typical 800 μm cantilever

Разработка имитационной модели системы электропитания тяжелого самолета

Работа посвящена проектированию модели системы электроснабжения тяжелого самолета в пакете прикладных программ Matlab Simulink и создания автоматизированного рабочего места в среде разработки Microsoft Visual Studio на языке программирования C++.This work is devoted to designing an electrical power generating system (EPGS) model for heavy aircrafts in the Matlab Simulink application package and creating an automatized working place within the Microsoft Visual Studio development environment in the programming language C +

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and ohmic current, the hysteresis loop is calculated without performing a static leakage current measurement, which causes a high dc field stress to the sample. The applicability of the proposed measurement procedure is demonstrated on a Pt/Pb(Zr,Ti)O-3/IrO2 ferroelectric capacitor revealing a high leakage current. (C) 2005 American Institute of Physics

Finite-element analysis of ceramic multilayer capacitors : modeling and electrical impedance spectroscopy for a non-destructive failure test

The opportunities are introduced to calculate the electrical, mechanical, and thermal couplings of ceramic multilayer capacitors (MLCs) with the finite-element method. The results may lead to improvements in the production, integration, and operation of MLCs. In this paper, a comparison is given of calculations and measurements of electrochemical resonances in the impedance spectra of MLCs. The simulation of defective capacitors with three different types of assumed faults reveals the changes in the impedance spectra due to these defects. This allows the prediction of flaws in MLCs based on measurement of the impedance spectra