Leakage Power Reduction Techniques in Deep Submicron Technologies for VLSI Applications

AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLSI circuit designs especially with on-chip devices as it doubles for every two years[4]-[5]. The scaling down of threshold voltage has contributed enormously towards increase in subthreshold leakage current thereby making the static (leakage) power dissipation very high. According to International Technology Roadmap for Semiconductors (ITRS), the total power dissipation may be significantly contributed by leakage power dissipation [1]. The battery operated devices with long duration in standby mode may be drained out very quickly due to the leakage power. In CMOS submicron technologies, leakage power dissipation plays a significant role. However, various low power design techniques for efficient minimization of leakage power are proposed in the literature review. A comprehensive study and analysis of various leakage power minimization techniques have been presented in this paper. The present research study and its corresponding analysis are mainly focusing on circuit performance parameters. It is implied from the current literature that only an appropriate choice of leakage power minimization technique for a specific application can be effectively carried by a VLSI circuit designer based on sequential analytical approach

A Novel Low Power 3 Transistor based Universal Gate for VLSI Applications

217-221NAND and NOR gates are the two universal logic gates and any other logic gates can be built using them. This paper presents a novel three transistors (3T) based NAND gate with exact output logic levels, yet maintaining comparable performance than the other available NAND gate logic structures. The new logic is characterized by superior speed and low power which can be easily fabricated for Very Large Scale Integration (VLSI) designs. The simulation tests were performed by employing standard 90nm CMOS process technology