Asymmetric Avalanches in the Condensate of a Zeeman-limited Superconductor

We report the non-equilibrium behavior of disordered superconducting Al films in high Zeeman fields. We have measured the tunneling density of states of the films through the first-order Zeeman critical field transition. We find that films with sheet resistances of a few hundred ohms exhibit large avalanche-like collapses of the condensate on the superheating branch of the critical field hysteresis loop. In contrast, the transition back into the superconducting phase (i.e., along the supercooling branch) is always continuous. The fact that the condensate follows an unstable trajectory to the normal state suggests that the order parameter in the hysteretic regime is not homogeneous.Comment: 5 pages, 5 figures, to appear in PR

Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films

We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm-thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, $H_{ex}$, of a few tesla in low resistance Be films with sheet resistance $R\ll R_Q$, where $R_Q=h/e^2$ is the quantum resistance. We show that $H_{ex}$ survives in very high resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated insulator phase of Be films with $R\gg R_Q$.Comment: To be published in Physical Review Letter

Asymmetric avalanche behavior in a zeeman-limited superconductor

We have performed transport and tunneling density of states measurements of ultra-thin Al films through The first-order parallel critical field transition. The transition is intrinsically hysteretic and exhibits avalanche-like jumps in both resistivity and tunneling density states. Tunneling measurements on films with sheet resistances of a few hundred ohms show large avalanche-like collapses of The condensate on The superheating branch of The critical field hysteresis loop. In contrast, The transition back into The superconducting phase (i.e., along The supercooling branch) is always continuous

Electrostatic tuning of the proximity-induced exchange field in EuS/Al bilayers

We demonstrate that the proximity-induced exchange field Hex in ferromagnetic-paramagnetic bilayers can be modulated with an electric field. An electrostatic gate arrangement is used to tune the magnitude of Hex in the Al component of EuS/Al bilayers. In samples with Hex∼2 T, we were able to produce modulations of ±10 mT with the application of perpendicular electric fields of the order of ±106 V/cm. We discuss several possible mechanisms accounting for the electric field\u27s influence on the interfacial coupling between the Al layer and the ferromagnetic insulator EuS, along with the prospects of producing a superconducting field-effect transistor. © 2013 American Physical Society

Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe

We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a transition to a magnetic state at $T_c=275$ K as identified by a sharp peak in the ac magnetic susceptibility, as well as second phase transition at lower temperature that becomes apparent only at finite magnetic field. We discover two phase transitions in the specific heat at temperatures much below the Curie temperature one of which we associate with changes to the magnetic structure. A magnetic field reduces the temperature of this transition which corresponds closely to the sharp peak observed in the ac susceptibility at fields above 5 kOe. The second of these transitions is not affected by the application of field and has no signature in the magnetic properties or our crystal structure parameters. Transport measurements indicate that MnGe is metal with a negative magnetoresistance similar to that seen in isostructural FeGe and MnSi. Hall effect measurements reveal a carrier concentration of about 0.5 carriers per formula unit also similar to that found in FeGe and MnSi. CoGe is shown to be a low carrier density metal with a very small, nearly temperature independent diamagnetic susceptibility.Comment: 16 pages 23 figure

Competing magnetic states, disorder, and the magnetic character of Fe3Ga4

The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are investigated to explore the sensitivity of the magnetic states to temperature, magnetic field, and sample history. The data reveal a moderate anisotropy in the magnetization and the metamagnetic critical field along with features in the specific heat at the magnetic transitions $T_1=68$ K and $T_2=360$ K. Both $T_1$ and $T_2$ are found to be sensitive to the annealing conditions of the crystals suggesting that disorder affects the competition between the ferromagnetic (FM) and antiferromagnetic (AFM) states. Resistivity measurements reveal metallic transport with a sharp anomaly associated with the transition at $T_2$. The Hall effect is dominated by the anomalous contribution which rivals that of magnetic semiconductors in magnitude ($-5 \mu \Omega$ cm at 2 T and 350 K) and undergoes a change of sign upon cooling into the low temperature FM state. The temperature and field dependence of the Hall effect indicate that the magnetism is likely to be highly itinerant in character and that a significant change in the electronic structure accompanies the magnetic transitions. We observe a contribution from the topological Hall effect in the AFM phase suggesting a non-coplanar contribution to the magnetism. Electronic structure calculations predict an AFM ground state with a wavevector parallel to the crystallographic $c$-axis preferred over the experimentally measured FM state by $\approx$ 50 meV per unit cell. However, supercell calculations with a small density of Fe-antisite defects introduced tend to stabilize the FM over the AFM state indicating that antisite defects may be the cause of the sensitivity to sample synthesis conditions.Comment: 13 pages, 14 figures, and 4 supplementary table