Monitoring Deformation in Graphene Through Hyperspectral Synchrotron Spectroscopy to Inform Fabrication

The promise from graphene to produce devices with high mobilities and detectors with fast response times is truncated in practice by strain and deformation originating during growth and subsequent processing. This work describes effects from graphene growth, multiple layer transfer, and substrate termination on out of plane deformation, critical to device performance. Synchrotron spectroscopy data was acquired with a state-of-the-art hyperspectral large-area detector to describe growth and processing with molecular sensitivity at wafer length scales. A study of methodologies used in data analysis discouraged dichroic ratio approaches in favor of orbital vector approximations and data mining algorithms. Orbital vector methods provide a physical insight into mobility-detrimental rippling by identifying ripple frequency as main actor, rather than intensity; which was confirmed by data mining algorithms, and in good agreement with electron scattering theories of corrugation in graphene. This work paves the way to efficient information from mechanical properties in graphene in a high throughput mode throughout growth and processing in a materials by design approach