2 research outputs found
Structural, optical and electrical properties of (V<sub>2</sub>O<sub>5</sub>)<sub>1</sub><sub><span style="font-family:Symbol;mso-ascii-font-family:"Times New Roman";mso-hansi-font-family: "Times New Roman";mso-char-type:symbol;mso-symbol-font-family:Symbol" lang="EN-US">-x</span></sub>-(MoO<sub>3</sub>)<sub>x</sub> thin films
No full text563-568Thin films of V2O5,
MoO3 and (V2O5)1-x-(MoO3)x were<b style="mso-bidi-font-weight:
normal"> deposited on to glass and p-Si
(1 0 0) substrates by flash evaporation technique at the substrate temperatures
of 300 K and 500 K at a fixed oxygen partial pressure of 5ÂŽ10<span style="font-family:Symbol;mso-ascii-font-family:
" times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB">-4 mbar.
These deposited films were characterized by XRD, IR, UV VIS spectra. The
structure of (V2O5)1-x-(MoO3)x films is found to be amorphous
for x= 0.5. The IR spectra confirm the formation of (V2O5)1-x-(MoO3)x mixed
oxide films for 0x<1. The
energy gaps of the mixed oxide films are in between 2.1 to 2.56 eV. The width
of localized states is 0.92 eV (for x=0).
The electrical conductivity of the V2O5 films is 2ÂŽ10<span style="font-family:Symbol;mso-ascii-font-family:
" times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB">-3 ohm-1 cm-1 and decreases with increasing the
MoO3 concentration in (V2O5)1-x-(MoO3)x thin films.
</span
