Structural, optical and electrical properties of (V₂O₅)₁_{<span style="font-family:Symbol;mso-ascii-font-family:"Times New Roman";mso-hansi-font-family: "Times New Roman";mso-char-type:symbol;mso-symbol-font-family:Symbol" lang="EN-US">-x</span>}-(MoO₃)_x thin films

Abstract

563-568Thin films of V2O5, MoO3 and (V2O5)1-x-(MoO3)x were<b style="mso-bidi-font-weight: normal"> deposited on to glass and p-Si (1 0 0) substrates by flash evaporation technique at the substrate temperatures of 300 K and 500 K at a fixed oxygen partial pressure of 5´10<span style="font-family:Symbol;mso-ascii-font-family: " times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB">-4 mbar. These deposited films were characterized by XRD, IR, UV VIS spectra. The structure of (V2O5)1-x-(MoO3)x films is found to be amorphous for x= 0.5. The IR spectra confirm the formation of (V2O5)1-x-(MoO3)x mixed oxide films for 0x<1. The energy gaps of the mixed oxide films are in between 2.1 to 2.56 eV. The width of localized states is 0.92 eV (for x=0). The electrical conductivity of the V2O5 films is 2´10<span style="font-family:Symbol;mso-ascii-font-family: " times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB">-3 ohm-1 cm-1 and decreases with increasing the MoO3 concentration in (V2O5)1-x-(MoO3)x thin films. </span