Broadband method for precise microwave spectroscopy of superconducting thin films near the critical temperature

We present a high-resolution microwave spectrometer to measure the frequency-dependent complex conductivity of a superconducting thin film near the critical temperature. The instrument is based on a broadband measurement of the complex reflection coefficient, $S_{\rm 11}$, of a coaxial transmission line, which is terminated to a thin film sample with the electrodes in a Corbino disk shape. In the vicinity of the critical temperature, the standard calibration technique using three known standards fails to extract the strong frequency dependence of the complex conductivity induced by the superconducting fluctuations. This is because a small unexpected difference between the phase parts of $S_{\rm 11}$ for a short and load standards gives rise to a large error in the detailed frequency dependence of the complex conductivity near the superconducting transition. We demonstrate that a new calibration procedure using the normal-state conductivity of a sample as a load standard resolves this difficulty. The high quality performance of this spectrometer, which covers the frequency range between 0.1 GHz and 10 GHz, the temperature range down to 10 K, and the magnetic field range up to 1 T, is illustrated by the experimental results on several thin films of both conventional and high temperature superconductors.Comment: 13 pages, 14 figure

Interaction-induced harmonic frequency mixing in quantum dots

We show that harmonic frequency mixing in quantum dots coupled to two leads under the influence of time-dependent voltages of different frequency is dominated by interaction effects. This offers a unique and direct spectroscopic tool to access correlations, and holds promise for efficient frequency mixing in nano-devices. Explicit results are provided for an Anderson dot and for a molecular level with phonon-mediated interactions.Comment: 4 pages, 2 figures, accepted for publication in Phys.Rev.Let

Radio-frequency operation of a double-island single-electron transistor

We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity, we compare a DISET to a conventional single-electron transistor (SET). We find that a DISET can be more sensitive than a SET for identical, minimum device resistances in the Coulomb blockade regime. This is of particular importance for rf operation where ideal impedance matching to 50 Ohm transmission lines is only possible for a limited range of device resistances. We report a charge sensitivity of 5.6E-6 e/sqrt(Hz) for a rf-DISET, together with a demonstration of single-shot detection of small (<=0.1e) charge signals on microsecond timescales.Comment: 6 pages, 6 figure

Non-degenerate, three-wave mixing with the Josephson ring modulator

The Josephson ring modulator (JRM) is a device, based on Josephson tunnel junctions, capable of performing non-degenerate mixing in the microwave regime without losses. The generic scattering matrix of the device is calculated by solving coupled quantum Langevin equations. Its form shows that the device can achieve quantum-limited noise performance both as an amplifier and a mixer. Fundamental limitations on simultaneous optimization of performance metrics like gain, bandwidth and dynamic range (including the effect of pump depletion) are discussed. We also present three possible integrations of the JRM as the active medium in a different electromagnetic environment. The resulting circuits, named Josephson parametric converters (JPC), are discussed in detail, and experimental data on their dynamic range are found to be in good agreement with theoretical predictions. We also discuss future prospects and requisite optimization of JPC as a preamplifier for qubit readout applications.Comment: 21 pages, 16 figures, 4 table

Power-dependent internal loss in Josephson bifurcation amplifiers

We have studied nonlinear superconducting resonators: lambda/2 coplanar-waveguide (CPW) resonators with Josephson junctions (JJs) placed in the middle and lambda/4 CPW resonators terminated by JJs, which can be used for the qubit readout as "bifurcation amplifiers." The nonlinearity of the resonators arises from the Josephson junctions, and because of the nonlinearity, the resonators with appropriate parameters are expected to show a hysteretic response to the frequency sweep, or "bifurcation," when they are driven with a sufficiently large power. We designed and fabricated resonators whose resonant frequencies were around 10 GHz. We characterized the resonators at low temperatures, T<0.05 K, and confirmed that they indeed exhibited hysteresis. The sizes of the hysteresis, however, are sometimes considerably smaller than the predictions based on the loaded quality factor in the weak drive regime. When the discrepancy appears, it is mostly explained by taking into account the internal loss, which often increases in our resonators with increasing drive power in the relevant power range. As a possible origin of the power-dependent loss, the quasiparticle channel of conductance of the JJs is discussed.Comment: 8 pages, 9 figure

Reflection-Free One-Way Edge Modes in a Gyromagnetic Photonic Crystal

We point out that electromagnetic one-way edge modes analogous to quantum Hall edge states, originally predicted by Raghu and Haldane in 2D gyroelectric photonic crystals possessing Dirac point-derived bandgaps, can appear in more general settings. In particular, we show that the TM modes in a gyromagnetic photonic crystal can be formally mapped to electronic wavefunctions in a periodic electromagnetic field, so that the only requirement for the existence of one-way edge modes is that the Chern number for all bands below a gap is non-zero. In a square-lattice gyromagnetic Yttrium-Iron-Garnet photonic crystal operating at microwave frequencies, which lacks Dirac points, time-reversal breaking is strong enough that the effect should be easily observable. For realistic material parameters, the edge modes occupy a 10% band gap. Numerical simulations of a one-way waveguide incorporating this crystal show 100% transmission across strong defects, such as perfect conductors several lattice constants wide, larger than the width of the waveguide.Comment: 4 pages, 3 figures (Figs. 1 and 2 revised.

A near-field scanned microwave probe for spatially localized electrical metrology

We have developed a near-field scanned microwave probe with a sampling volume of approximately 10 micron in diameter, which is the smallest one achieved in near-field microwave microscopy. This volume is defined to confine close to 100 percent of the probe net sampling reactive energy, thus making the response virtually independent on the sample properties outside of this region. The probe is formed by a 4 GHz balanced stripline resonator with a few-micron tip size. It provides non-contact, non-invasive measurement and is uniquely suited for spatially localized electrical metrology applications, e.g. on semiconductor production wafers.Comment: 6 pages, 3 figures, submitted to Appl. Phys. Let

Experimental Demonstration of a Structured Material with Extreme Effective Parameters at Microwaves

Following our recent theoretical studies [M. G. Silveirinha, C. A. Fernandes, Phys. Rev. B, 78, 033108, 2008], it is experimentally verified that an array of crossed metallic wires may behave as a nonresonant material with extremely large index of refraction at microwaves, and may enable the realization of ultra-subwavelength waveguides.Comment: accepted for publication in Applied Physics Letters (in press). Applied Physics Letters (in press) (2008

Analysis of broadband microwave conductivity and permittivity measurements of semiconducting materials

We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity, here we present a closed calibration and evaluation procedure for frequencies up to 5 GHz, based on the rigorous solution for the electromagnetic field distribution inside the sample combined with the variational principle; basically no limiting assumptions are necessary. A simple static model based on the electric current distribution proves to yield the same frequency dependence of the complex conductivity up to 1 GHz. After a critical discussion we apply the developed method to the hopping transport in Si:P at temperature down to 1 K.Comment: 9 pages, 10 figures, accepted for publication in the Journal of Applied Physic