Enhanced Bragg reflections from size-matched heterostructure photonic crystal thin films prepared by the Langmuir-Blodgett method

The Langmuir-Blodgett method was used to engineer photonic crystal thin films of an AB architecture. Structures were studied by transmittance and reflectance spectroscopies. For an AB structure in which the silica particle diameter B is twice that of A, reflectance features associated with the first order Bragg peak for the ``A'' domain are only observed when the structure is probed from the A side of the structure. Furthermore, this feature is enhanced in intensity compared to that for a structure consisting solely of A particles. These findings are attributed to a matching of first and second order Bragg processes

Photonic crystal thin films of GaAs prepared by atomic layer deposition

Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index

ZnO nanorod-arrays as photo-(electro)chemical materials: strategies designed to overcome the material's natural limitations

The urgent need for clean and storable energy drives many currently topical areas of materials research. Among the many materials under investigation zinc oxide is one of the most studied in relation to its use in photo-(electro)chemical applications. This study aims to give an overview of some of the main challenges associated with the use of zinc oxide for these applications: the high density of intrinsic defects which can lead to fast recombination, low visible light absorption and the occurrence of photo-corrosion. Employing simple low-temperature solution based methods; it is shown how defect-engineering can be used to increase the photo-electrochemical performance and how doping can strongly increase the visible light absorption of zinc oxide nanorod-arrays. Furthermore the deposition of ultra-thin titanium dioxide layers using atomic layer deposition is investigated as possible route for the protection of zinc oxide against photo-corrosion

Electrical and physical characterization of the Al₂O₃/ <i>p</i>-GaSb interface for 1%, 5%, 10%, and 22% (NH₄)₂S surface treatments

In this work, the impact of ammonium sulfide ((NH&lt;sub&gt;4&lt;/sub&gt;)&lt;sub&gt;2&lt;/sub&gt;S) surface treatment on the electrical passivation of the Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/ &lt;i&gt;p&lt;/i&gt;-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH&lt;sub&gt;4&lt;/sub&gt;)&lt;sub&gt;2&lt;/sub&gt;S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (&lt;i&gt;CV&lt;/i&gt;) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (&lt;i&gt;D&lt;/i&gt;&lt;sub&gt;it&lt;/sub&gt;) distribution showed a minimum value of 4 x 10&lt;sup&gt;12&lt;/sup&gt; cm&lt;sup&gt;-2&lt;/sup&gt;eV&lt;sup&gt;-1&lt;/sup&gt; at &lt;i&gt;E&lt;/i&gt;&lt;sub&gt;v&lt;/sub&gt; + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/ &lt;i&gt;p&lt;/i&gt;-GaSb interface of samples treated with 10% and 22% (NH&lt;sub&gt;4&lt;/sub&gt;)&lt;sub&gt;2&lt;/sub&gt;S. In combination, these effects degrade the interface quality as reflected in the &lt;i&gt;CV&lt;/i&gt; characteristics

Longitudinal variation in O6-alkylguanine DNA-alkyltransferase activity in the human colon and rectum

In a systematic study of O6-alkylguanine DNA-alkyltransferase activity in the human colon and rectum, tumours were found to occur in regions of low activity. These results are consistent with the hypothesis that O6-alkylguanine DNA-alkyltransferase levels and alkylating agent exposure may be important determinants of large bowel tumorigenesis