High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite

We report on the investigation of magnetic field induced charge density wave and Hall coefficient sign reversal in a quasi-two dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting the role of hole-like quasi-particles in this effect. Angular dependent measurements show that the charge density wave transition and Hall sign reversal fields follow the magnetic field component along the c-axis of graphite

Electron-hole coexistence in disordered graphene probed by high-field magneto-transport

We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $\nu=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations are the largest is directly linked to the mean size of the puddles

Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons

We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).Comment: 4 pages, 4 figure

Integer Quantum Hall Effect in Trilayer Graphene

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.Comment: 5 pages, 4 figure

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.Comment: 19 pages, 5 figure

Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons

We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene

Directional silicon nano-antennas for quantum emitter control designed by evolutionary optimization

We optimize silicon nano-antennas to enhance and steer the emission of local quantum sources. We combine global evolutionary optimization (EO) with frequency domain electrodynamical simulations, and compare design strategies based on resonant and non-resonant building blocks. Specifically, we investigate the performance of models with different degrees of freedom but comparable amount of available material. We find that simpler geometric models allow significantly faster convergence of the optimizer, which, expectedly, comes at the cost of a reduced optical performance. We finally analyze the physical mechanisms underlying the directional emission that also comes with an emission rate enhancement, and find a surprising robustness against perturbations of the source emitter location. This makes the structures highly interesting for actual nano-fabrication. We believe that optimized, all-dielectric silicon nano-antennas have high potential for genuine breakthroughs in a multitude of applications in nanophotonics and quantum technologies.Comment: 8 pages, 6 figure