4,669 research outputs found

    Airy-function electron localization in the oxide superlattices

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    Oxide superlattices and microstructures hold the promise for creating a new class of devices with unprecedented functionalities. Density-functional studies of the recently fabricated superlattices of lattice-matched perovskite titanates (SrTiO3)n/(LaTiO3)m reveal a classic wedge-shaped potential originating from the Coulomb potential of a charged sheet of La atoms. The potential in turn confines the electrons in the vicinity of the sheet, leading to an Airy-function localization of the electron states. Magnetism is suppressed for structures with a single LaTiO3 monolayer, while the bulk antiferromagnetism is recovered in the structures with a thicker LaTiO3, with a narrow transition region separating the magnetic LaTiO3 and the non-magnetic SrTiO3

    Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions

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    The temperature dependence of conductivity σ(T)\sigma (T) in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and their number was varied using substrate bias. The data suggest that in the limit of T→0T\to 0 the metallic behavior, as characterized by dσ/dT<0d\sigma/dT < 0, is suppressed by an arbitrarily small amount of scattering by local magnetic moments.Comment: 4 pages, revtex, plus four encapsulated postscript figure

    Absence of Localization in Certain Field Effect Transistors

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    We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B=0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.Comment: 8 pages, LaTeX, figure label change

    Metal-insulator transition and glassy behavior in two-dimensional electron systems

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    Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs. (includes some low-quality figs; send e-mail to get high-quality figs.
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