Multispectral anti-reflection coatings based on YbF3/ZnS materials on ZnGeP2 substrate by the IBS method for Mid-IR laser applications

A multispectral anti-reflective coating of high radiation strength for laser applications in the IR spectrum for nonlinear ZnGeP2 crystals has been developed for the first time. The coating was constructed using YbF3/ZnS. The developed coating was obtained by a novel approach using ion-beam deposition of these materials on a ZnGeP2 substrate. It has a high LIDT of more than 2 J/cm2. Optimal layer deposition regimes were found for high film density and low absorption, and good adhesion of the coating to the substrate was achieved. At the same time, there was no dissociation of the double compound under high-energy ions

Terahertz generation by means of ZnGeP2 large aperture photoconductive antenna

The generation of terahertz (THz) radiation using a ZnGeP2 (ZGP) large-aperture photoconductive antenna (PCA) was demonstrated. The semiconductors were excited above and below the bandgap (400 and 800 nm) by a femtosecond Ti:sapphire laser. The THz pulse waveform generated by the ZGP antenna was measured using a time-domain spectroscopy technique. The antenna’s THz pulse energy dependence on the optical pump energy was measured, and saturation fluence and carrier mobility were estimated. The ZGP and a chemical vapor deposited ZnSe-based PCA were compared

Optical AR coatings of the Mid-IR band for ZnGeP2 single crystals based on ZnS and oxide aluminum

In this work, the parameters of antireflection interference coatings based on alternating layers of ZnS/Al2O3 on the laser-induced damage threshold (LIDT) of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm were determined. The coating deposition was carried out using the ion-beam sputtering method. The LIDT of the sample with a coating based on alternating layers ZnS and Al2O3 was equal to WEo = 3.45 J/cm2, and the LIDT of the uncoated sample was equal to WEo = 2.23 J/cm2. An increase in the optical breakdown threshold by ~55% was observed after the deposition of an AR coating based on ZnS and Al2O3 materials. An assumption was made about the absence of local fluctuations in the composition and mechanical stresses in the case of the coated sample, namely that this leads to good adhesion of the multilayer coating to the polished surface of the crystal, and as a result to an increase in the optical breakdown threshold as compared to the uncoated sample due to closure of the dangling chemical bonds and bulk defects emerging on the polished surface

Errors in determining coordinates in the digital holography of particles

Based on the approach applied to diffraction-limited optical systems, the study evaluates the measurement errors of transverse and longitudinal coordinates of particle images reconstructed from digital holograms. The paper shows the experimental results of testing the above estimates

The effect of volume inclusions of the ZnGeP2 single-crystal on the dispersion of the refraction index and the absorption coefficient in mid-IR and terahertz ranges of wavelengths

Volume filamentary inclusions in ZnGeP2 have been visualized using the digital holography method. The chemical composition of the filamentous volume inclusions Zn3P2 and Ge have been determined using the method of X-ray diffraction analysis. It is shown that the presence of volume inclusions in the ZnGeP2 singlecrystal leads to an increase in the reflection coefficient in the region of 12.5 μm. The dispersion dependences of the refractive index and the absorption coefficient of the studied ZnGeP2 samples at wavelengths of 300–1000 μm in the region of non-fundamental absorption have been obtained. It has been shown that the presence of volume inclusions in a single-crystal leads to an increase in the refractive index in the entire THz range under study by the value of Δnmax = 0,0008. The difference between absorption coefficients for the studied samples varies from Δα = 0.1 cm 1 to Δα = 0.15 cm 1 depending on the wavelength

Laser-induced damage threshold of nonlinear GaSe and GaSe:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 μm

The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed the influence of test radiation energy parameters (pulse repetition rate, pulse duration) on the damage threshold. Laser-induced damage threshold was determined with the parameters of the incident radiation close to the pump radiation parameters of promising dual-wavelength optical parametric oscillators (effective pump sources for THz difference frequency oscillators): wavelength was ≈ 2.1 μm; pulse repetition rates were 10, 12, 14, and 20 kHz; and pulse durations were 15, 18, 20, and 22 ns. The obtained results made it possible to conclude that the value of GaSe damage threshold at a wavelength of 2.091 μm of the incident radiation was influenced by the accumulation effects (the damage threshold decreased as the pulse repetition rate increased). The accumulation effects were more significant in the case of the In-doped sample, since a more significant decrease in the damage threshold was observed with increasing frequency in terms of the peak power and the fluence

Investigation of the persistence conductivity and photoelectric characteristics in detectors with interdigital electrodes based on β-Ga2O3

Herein, the electrical and photoelectric characteristics of solar-blind UV detectors based on β-Ga2O3 films with interdigital electrodes are presented. The sensors with interdigital electrodes have interelectrode spacing d = 5, 10, 30, and 50 μm. The structures exhibit high sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. The detectors with the smallest interelectrode spacing (5 μm) demonstrate the highest photocurrent value. The detectors have a saturation region on the current–voltage characteristics under UV irradiation, which shifts to the region of lower voltages with decreasing interelectrode spacing. A mechanism to explain the presence of the saturation region on the I–V characteristic is proposed. The sensors exhibit high value of a persistence photoconductivity, which decreases exponentially with an estimated value of the time constant t 1 = 59–63 s

Visualization of volumetric defects and dynamic processes in crystals by digital IR holography

In this work, the method of IR digital holography intended for detection of volumetric defects in ZnGeP2 single crystals has been tested. A method of visualization of the process of optical damage of a ZnGeP2 single crystal using digital holography is suggested

Multispectral Anti-Reflection Coatings Based on YbF3/ZnS Materials on ZnGeP2 Substrate by the IBS Method for Mid-IR Laser Applications

A multispectral anti-reflective coating of high radiation strength for laser applications in the IR spectrum for nonlinear ZnGeP2 crystals has been developed for the first time. The coating was constructed using YbF3/ZnS. The developed coating was obtained by a novel approach using ion-beam deposition of these materials on a ZnGeP2 substrate. It has a high LIDT of more than 2 J/cm2. Optimal layer deposition regimes were found for high film density and low absorption, and good adhesion of the coating to the substrate was achieved. At the same time, there was no dissociation of the double compound under high-energy ions

Visualization of volumetric defects and dynamic processes in crystals by digital IR-holography

In this work, the method of IR digital holography intended for detection of volumetric defects in ZnGeP2 single crystals has been tested. A method of visualization of the process of optical damage of a ZnGeP2 single crystal using digital holography is suggested