Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear

Evolution of MBE HgCdTe defect structure studied with ion milling method

In this paper, is shown how ion milling can assist in assessing the defect structure of MCT by revealing the residual doping, and establishing the minimum level of donor concentration Nmd, which is needed for obtaining n-regions with a reproducible n value. For this purpose, a study of the electrical properties of ion-milled LWIR n-type MCT films, un-doped and doped with indium with the concentration NIn = 5 × 1014–1017 cm−3 is proposed

Synthesis of dye-sensitized solar cells. Efficiency cells as a thickness of titanium dioxide

Defying the influence of the thickness of TiO2 efficiency of dye-sensitized solar cell. It was confirmed that the compatibility of printed layers with the parameters closely related with the DSSC. It was found that the increase in thickness of the titanium dioxide layer, increases the distance between the electrodes, determined by the thickness of the Surlyn foil. With the rise of thickness of dyed layer of TiO2 established decrease in the value of its transmittance. Greatest transparency and aesthetic value obtained for photovoltaic modules with a single layer of titanium dioxide. The improved performance efficiency and preferred yields maximum power were noticed and exhibited by the cells covered with three layers of TiO2. It was established that the behaviour of economic efficiency in the production process, provides a range of cells with two layers of oxide, showing a similar performance and greater transparency

Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear