1/f noise of SnO2 nanowire transistors

The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to be proportional to I-d(2) in the transistor operating regime. The extracted Hooge\u27s constants (alpha(H)) are 4.5x10(-2) at V-ds=0.1 V and 5.1x10(-2) at V-ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed

High performance In2O3 nanowire transistors using organic gate nanodielectrics

We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n-type transistor characteristics with an on-current of similar to 25 mu A for a single In2O3 nanowire at 2.0V(ds), 2.1V(gs), a subthreshold slope of 0.2 V/decade, an on-off current ratio of 10(6), and a field-effect mobility of similar to 1450 cm(2)/V s. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies

Oxygen plasma exposure effects on indium oxide nanowire transistors

In2O3 nanowire transistors are fabricated with and without oxygen plasma exposure of various regions of the nanowire. In two-terminal devices, exposure of the channel region results in an increased conductance of the channel region. For In2O3 nanowire transistors in which the source/drain regions are exposed to oxygen plasma, the mobility, on–off current ratio and subthreshold slope, are improved with respect to those of non-exposed devices. Simulations using a two-dimensional device simulator (MEDICI) show that improved device performance can be quantified in terms of changes in interfacial trap, shifts in fixed charge densities and the corresponding reduction in Schottky barrier height at the contacts

LETTER pubs.acs.org/NanoLett Fully Printed Separated Carbon Nanotube Thin Film Transistor Circuits and Its Application in Organic Light Emitting Diode Control

ABSTRACT: The advantages of printed electronics and semiconducting single-walled carbon nanotubes (SWCNTs) are combined for the first time for display electronics. Conductive silver ink and 98 % semiconductive SWCNT solutions are used to print back-gated thin film transistors with high mobility, high on/off ratio, and high current carrying capacity. In addition, with printed polyethylenimine with LiClO4 as the gating material, fully printed top-gated devices have been made to work as excellent current switches for organic light emitting diodes (OLEDs). An OLED driving circuit composed of two top-gated fully printed transistors has been fabricated, and the successful control over external OLED is demonstrated. Our work demonstrates the significant potential of using printed carbon nanotube electronics for display backplane applications