2015/16 seasonal vaccine effectiveness against hospitalisation with influenza a(H1N1)pdm09 and B among elderly people in Europe: Results from the I-MOVE+ project

We conducted a multicentre test-negative caseâ\u80\u93control study in 27 hospitals of 11 European countries to measure 2015/16 influenza vaccine effectiveness (IVE) against hospitalised influenza A(H1N1)pdm09 and B among people aged â\u89¥ 65 years. Patients swabbed within 7 days after onset of symptoms compatible with severe acute respiratory infection were included. Information on demographics, vaccination and underlying conditions was collected. Using logistic regression, we measured IVE adjusted for potential confounders. We included 355 influenza A(H1N1)pdm09 cases, 110 influenza B cases, and 1,274 controls. Adjusted IVE against influenza A(H1N1)pdm09 was 42% (95% confidence interval (CI): 22 to 57). It was 59% (95% CI: 23 to 78), 48% (95% CI: 5 to 71), 43% (95% CI: 8 to 65) and 39% (95% CI: 7 to 60) in patients with diabetes mellitus, cancer, lung and heart disease, respectively. Adjusted IVE against influenza B was 52% (95% CI: 24 to 70). It was 62% (95% CI: 5 to 85), 60% (95% CI: 18 to 80) and 36% (95% CI: -23 to 67) in patients with diabetes mellitus, lung and heart disease, respectively. 2015/16 IVE estimates against hospitalised influenza in elderly people was moderate against influenza A(H1N1)pdm09 and B, including among those with diabetes mellitus, cancer, lung or heart diseases

0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate

A Monolithic Visible, Infrared and Terahertz 2D Detector

A monolithic multispectral detector for imaging in the visible (VIS), infrared (IR) and terahertz (THz) ranges has been designed for operation at room temperature. This sensor is composed of a CMOS readout integrated circuit (ROIC) housing visible photodiodes and of IR and THz microbolometer pixels processed above the CMOS wafer. Without package- and system-level issues, targeted individual pixel sensitivities are respectively an 80dB dynamic range for VIS photodiodes, a NETD=50mK @f/1 for IR and a THz NEP smaller than 10pW. Prototyping chips will be integrated in tri-spectral imaging and THz spectroscopy demonstration system

0.12 µm GATE LENGTH In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As HEMTs ON TRANSFERRED SUBSTRATE

ABSTRAC

A 160x160-pixel Image Sensor for Multispectral Visible, Infrared and Terahertz Detection

This paper describes the development and characterization of a 160×160-pixels image sensor for the simultaneous detection of visible, infrared and terahertz spectra. The monolithic imager is realized by means of post-processing of CMOS wafers housing the readout integrated circuit (ROIC). Visible pixels are implemented as conventional photodiodes in the ROIC, which contains also the addressing and processing electronics for the infrared and terahertz bands. Infrared and terahertz detectors are based on micro-bolometers and realized during the post-processing fabrication steps. A standard 0.35μm 2P4M CMOS wafer lot has been fabricated and processed, and single imagers characterized for the three spectral bands. Successful operation has been verified at 50 fps, with more than 100 dB dynamic range in the visible region, a NETD of 60mK in the infrared, and a 63pW NEP for the terahertz, with a total power consumption of 173 mW

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics

Antenna-coupled microbolometer based uncooled 2D array and camera for 2D real-time terahertz imaging

Conference of Terahertz Emitters, Receivers, and Applications IV ; Conference Date: 25 August 2013 Through 26 August 2013; Conference Code:101016International audienceCEA-Leti has developed a monolithic large focal plane array bolometric technology optimized for 2D real-time imaging in the terahertz range. Each pixel consists in a silicon microbolometer coupled to specific antennas and a resonant quarter-wavelength cavity. First prototypes of imaging arrays have been designed and manufactured for optimized sensing in the 1-3.5THz range where THz quantum cascade lasers are delivering high optical power. NEP in the order of 1 pW/sqrt(Hz) has been assessed at 2.5 THz. This paper reports the steps of this development, starting from the pixel level, to an array associated monolithically to its CMOS ROIC and finally a stand-alone camera. For each step, modeling, technological prototyping and experimental characterizations are presented

Absorption and emission properties of LBL PPV films deposited on ITO electrodes

In this work we studied the properties of absorption and emission line shape of layer-by-layer (LBL) poly(p-phenylene vinylene) (PPV) on indium-tin oxide (ITO) electrode. To minimize the PPV thermal conversion effects during the polymer processing, we used a less aggressive leaving group in the precursor polymer; minimizing electrode degradation. LBL ITO/PPV films showed the same absorption and emission line shape compared with LBL PPV films deposited on non-metallic substrates (glass). With this analysis we indirectly observe the decrease in the ITO degradation. Atomic force microscopy (AFM) technique was used to analyze quantitatively the microscopic morphology of the film surface. Results indicated that the substrate topology is not affected, to a large extent, by the use of dodecylbenzensulfonate (DBS) ion. (C) 2008 Elsevier B.V. All rights reserved.Fundacao de Apoio a Pesquisa do Estado de Minas Gerais (FAPEMIG)Fundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq