Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in-situ sputter-anneal procedure under ultra high vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness.Comment: 3 pages, 3 figure

Electronic structure and magnetic properties of epitaxial FeRh(001) ultra-thin films on W(100)

Epitaxial FeRh(100) films (CsCl structure, $\sim 10\ ML\$ thick), prepared {\it in-situ} on a W(100) single crystal substrate, have been investigated via valence band and core level photoemission. The presence of the temperature-induced, first-order, antiferromagnetic to ferromagnetic (AF$\rightarrow$ FM) transition in these films has been verified via linear dichroism in photoemission from the Fe 3$p$ levels. Core level spectra indicate a large moment on the Fe atom, practically unchanged in the FM and AF phases. Judging from the valence band spectra, the metamagnetic transition takes place without substantial modification of the electronic structure. In the FM phase, the spin-resolved spectra compare satisfactorily to the calculated spin-polarized bulk band structure.Comment: 7 pages, 5 figure

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk

Effect of support of Co-Na-Mo catalysts on the direct conversion of CO<inf>2</inf> to hydrocarbons

This study of the effect of support of Co-Na-Mo based catalysts on the direct hydrogenation of CO$_2$ into hydrocarbons (HC) provides guidelines for the design of catalysts for CO$_2$ conversion. We demonstrate that the surface area of the support and the metal-support interaction have a key role determining the cobalt crystallite size and consequently the activity of the system. Cobalt particles with sizes <2 nm supported on MgO present low reverse water gas shift conversion with negligible Fischer-Tropsch activity. Increasing the cobalt particle size to ~15 nm supported on SiO$_2$ and ZSM-5 supports not only substantially increases the CO$_2$ conversion but it also provides high HC selectivities. Further increase of the cobalt particle size to 25–30 nm has a detrimental effect on the global CO$_2$ conversion with HC:CO ratios below 1, however, lower methane selectivity and enhanced formation of unsaturated HC products are achieved. Additionally, the metal-support interaction potentially also has a strong effect on the growth chain probability of the formed hydrocarbons, increasing as the metal-support interaction increases. These evidences demonstrate that CO$_2$ conversion and hydrocarbon distribution can be tuned towards desired products by controlled catalyst design.University of BathThis is the author accepted manuscript. The final version is available from Elsevier via http://dx.doi.org/10.1016/j.jcou.2016.06.00

Kink far below the Fermi level reveals new electron-magnon scattering channel in Fe

Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to many-body calculations carried out with a newly developed first-principles method, we show that a kink in the electronic band dispersion of a ferromagnetic material can occur at much deeper binding energies than expected (E_b=1.5 eV). We demonstrate that the observed spectral signature reflects the formation of a many-body state that includes a photohole bound to a coherent superposition of renormalized spin-flip excitations. The existence of such a many-body state sheds new light on the physics of the electron-magnon interaction which is essential in fields such as spintronics and Fe-based superconductivity.Comment: 6 pages, 2 figure

Direct observation of the band gap transition in atomically thin ReS2_2

ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures

Multistate current-induced magnetization switching in Au/Fe/MgO(001) epitaxial heterostructures

Magnetization switching using in-plane charge current recently has been widely investigated in heavy metal/ferromagnet bilayers with the switching mechanism usually attributed to the action of the spin-orbit coupling. Here we study in-plane current induced magnetization switching in model epitaxial bilayers that consist of Au(001) and Fe(001) grown on MgO(001). We use the planar Hall effect combined with magnetooptical Kerr effect (MOKE) microscopy to investigate magnetic properties of the bilayers and current-induced switching. We show that a current density beyond 1.4×107 A/cm can be employed for reproducible electrical switching of the magnetization between multiple stable states that correspond to different arrangements of magnetic domains with magnetization direction along one of the in-plane easy magnetization axes of the Fe(001) film. Lower current densities result in stable intermediate transversal resistances which are interpreted based on MOKE-microscopy investigations as resulting from the current-induced magnetic domain structure that is formed in the area of the Hall cross. We find that the physical mechanism of the current-induced magnetization switching of the Au/Fe/MgO(001) system at room temperature can be fully explained by the Oersted field, which is generated by the charge current flowing mostly through the Au layer

Bi12Rh3Cu2I5: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channels

Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation-free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi14Rh3I9, the first weak 3D TI, topology presumably arises from stacking of the intermetallic [(Bi4Rh)3I]2+ layers, which are predicted to be 2D TIs and to possess protected edge-states, separated by topologically trivial [Bi2I8]2− octahedra chains. In the new layered salt Bi12Rh3Cu2I5, the same intermetallic layers are separated by planar, i.e., only one atom thick, [Cu2I4]2− anions. Density functional theory (DFT)-based calculations show that the compound is a weak 3D TI, characterized by (Formula presented.), and that the topological gap is generated by strong spin–orbit coupling (E g,calc. ∼ 10 meV). According to a bonding analysis, the copper cations prevent strong coupling between the TI layers. The calculated surface spectral function for a finite-slab geometry shows distinct characteristics for the two terminations of the main crystal faces ⟨001⟩, viz., [(Bi4Rh)3I]2+ and [Cu2I4]2−. Photoelectron spectroscopy data confirm the calculated band structure. In situ four-point probe measurements indicate a highly anisotropic bulk semiconductor (E g,exp. = 28 meV) with path-independent metallic conductivity restricted to the surface as well as temperature-independent conductivity below 60 K