Superconducting gap parameters of MgB2 obtained on MgB2/Ag and MgB2/In junctions

MgB2 superconducting wires with critical temperature Tc approaching 40 K were used for preparation of MgB2/Ag and MgB2/In junctions. The differential conductance vs. voltage characteristics of N-S junctions exhibit clear contribution of Andreev reflection. Using modified BTK theory for s-wave superconductors two order parameters 4 meV and 2.6 meV have been determined from temperature dependencies. Surprisingly, larger order parameter vanishes at lower temperature ~20 K than smaller one with Tc 38 K. Both the magnitudes of the order parameters and their critical temperatures are in good agreement with theoretical calculations of electron-phonon coupling in MgB$_2$ carried out by Liu et al.Comment: revised manuscrip

Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.Comment: To be published in Applied Surface Science

MgB2 radio-frequency superconducting quantum interference device prepared by atomic force microscope lithography

A new method of preparation of radio-frequency superconducting quantum interference devices on MgB2 thin films is presented. The variable-thickness bridge was prepared by a combination of optical lithography and of the scratching by an atomic force microscope. The critical current of the nanobridge was 0.35 uA at 4.2 K. Non-contact measurements of the current-phase characteristics and of the critical current vs. temperature have been investigated on our structures.Comment: RevTeX4. Accepted in Appl. Phys. Let

Superconducting properties of MgB2 thin films prepared on flexible plastic substrates

Superconducting MgB2 thin films were prepared on 50-micrometer-thick, flexible polyamide Kapton-E foils by vacuum co-deposition of Mg and B precursors with nominal thickness of about 100 nm and a special ex-situ rapid annealing process in an Ar or vacuum atmosphere. In the optimal annealing process, the Mg-B films were heated to approximately 600 C, but at the same time, the backside of the structures was attached to a water-cooled radiator to avoid overheating of the plastic substrate. The resulting MgB2 films were amorphous with the onset of the superconducting transition at T_(c,on) about 33 K and the transition width of approximately 3 K. The critical current density was > 7x10^5 A/cm^2 at 4.2 K, and its temperature dependence indicated a granular film composition with a network of intergranular weak links. The films could be deposited on large-area foils (up to 400 cm^2) and, after processing, cut into any shapes (e.g., stripes) with scissors or bent multiple times, without any observed degradation of their superconducting properties.Comment: 3 figure

Time-resolved dynamics of the superconducting two-gap state in MgB2 thin films

Femtosecond pump-probe studies show that carrier dynamics in MgB2 films is governed by the sub-ps electron-phonon (e-ph) relaxation present at all temperatures, the few-ps e-ph process well pronounced below 70 K, and the sub-ns superconducting relaxation below Tc. The amplitude of the superconducting component versus temperature follows the superposition of the isotropic dirty gap and the 3-dimensional gap dependences, closing at two different Tc values. The time constant of the few-ps relaxation exhibits a double-divergence at temperatures corresponding to the Tc's of the two gaps.Comment: Accepted for publication in Phys.Rev.Let

Low-temperature performance of semiconducting asymmetric nanochannel diodes

We present our studies on fabrication and electrical and optical characterization of semiconducting asymmetric nanochannel diodes (ANCDs), focusing mainly on the temperature dependence of their current–voltage (I–V) characteristics in the range from room temperature to 77 K. These measurements enable us to elucidate the electron transport mechanism in a nanochannel. Our test devices were fabricated in a GaAs/AlGaAs heterostructure with a twodimensional electron gas layer and were patterned using electron-beam lithography. The 250-nmwide, 70-nm-deep trenches that define the nanochannel were ion-beam etched using the photoresist as a mask, so the resulting nanostructure consisted of approximately ten ANCDs connected in parallel with 2-μm-long, 230-nm-wide nanochannels. The ANCD I–V curves collected in the dark exhibited nonlinear, diode-type behavior at all tested temperatures. Their forward-biased regions were fitted to the classical diode equation with a thermionic barrier, with the ideality factor n and the saturation current as fitting parameters. We have obtained very good fits, but with n as large as ~50, suggesting that there must be a substantial voltage drop likely at the contact pads. The thermionic energy barrier was determined to be 56 meV at high temperatures. We have also observed that under optical illumination our ANCDs at low temperatures exhibited, at low illumination powers, a very strong photoresponse enhancement that exceeded that at room temperature. At 78 K, the responsivity was of the order of 104 A/W at the nW-level light excitation

Phonons in MgB2 by Polarized Raman Scattering on Single Crystals

The paper presents detailed Raman scattering study of the unusually broad E2g phonon mode in MgB2 crystal. For the first time, it is shown by the polarized Raman scattering on few-micron-size crystallites with natural faces that the observed broad Raman feature really does obey the selection rules of an E2g mode. Raman spectra on high quality polycrystalline superconducting MgB2 wires reveal a very symmetric E2g phonon line near 615 1/cm with the room temperature linewidth of 260 1/cm only. Additional scattering of different polarization dependence, observed in certain crystallites is interpreted as weighted phonon density of states induced by lattice imperfections.Comment: 4 pages + 7 figure