13 research outputs found
Experimental studies of thorium ions implantation from pulse laser plasma into thin silicon oxide layers
We report the results of experimental studies related to implantation of
thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion.
Thorium ions were generated by laser ablation from a metal target, and the
ionic component of the laser plasma was accelerated in an electric field
created by the potential difference (5, 10 and 15 kV) between the ablated
target and SiO2/Si(001) sample. Laser ablation system installed inside the
vacuum chamber of the electron spectrometer was equipped with YAG:Nd3+ laser
having the pulse energy of 100 mJ and time duration of 15 ns in the Q-switched
regime. Depth profile of thorium atoms implanted into the 10 nm thick
subsurface areas together with their chemical state as well as the band gap of
the modified silicon oxide at different conditions of implantation processes
were studied by means of X-ray photoelectron spectroscopy (XPS) and Reflected
Electron Energy Loss Spectroscopy (REELS) methods. Analysis of chemical
composition showed that the modified silicon oxide film contains complex
thorium silicates. Depending on local concentration of thorium atoms, the
experimentally established band gaps were located in the range of 6.0 - 9.0 eV.
Theoretical studies of optical properties of the SiO2 and ThO2 crystalline
systems have been performed by ab initio calculations within hybrid functional.
Optical properties of the SiO2/ThO2 composite were interpreted on the basis of
Bruggeman effective medium approximation. A quantitative assessment of the
yield of isomeric nuclei in "hot" laser plasma at the early stages of expansion
has been performed. The estimates made with experimental results demonstrated
that the laser implantation of thorium ions into the SiO2 matrix can be useful
for further research of low-lying isomeric transitions in 229Th isotope with
energy of 7.8(0.5) eV
Analytic and geometric properties of photoinduced effects in noncentrosymmetric crystals: photovoltaic current and optical rectification
An original dispersion relation between the stationary coherent nonlinear
optical responses by current and polarisation is obtained. The dispersion
relation provides a new complimentary tool that can be employed to study
light-induced charge transport models and facilitate experimental data
analysis. It is shown that the origin of the coherent current and the
dc-polarisation induced in a noncentrosymmetric crystal under illumination is
related to the theory of the Berry phase and can be represented in terms of the
renormalised geometric potentials. This renormalisation originates from the
extra phase difference acquired by a carrier in the light field on the quantum
transition between the electronic bands. The gauge invariance of the
corresponding expressions for the current and the polarisation is demonstrated.Comment: 7 page
Electronic excitations and self-trapping of electrons and holes in CaSO 4
A first-principles study of the electronic properties of a CaSO4 anhydrite structural phase has been performed. A theoretical estimation for the fundamental band gap (p → s transitions) is Eg = 9.6 eV and a proper threshold for p → d transitions is Epd = 10.8 eV. These values agree with the data obtained for a set of CaSO4 doped with Gd3+, Dy3+, Tm3+ and Tb3+ ions using the methods of low-temperature highly sensitive luminescence and thermoactivation spectroscopy. The results are consistent with theoretical predictions of a possible low-temperature self-trapping of oxygen p-holes. The hopping diffusion of hole polarons starts above ~40 K and is accompanied by a ~50–60 K peak of thermally stimulated luminescence of RE3+ ions caused due to the recombination of hole polarons with the electrons localized at RE3+. There is no direct evidence of the self-trapping of heavy d-electrons, however, one can argue that their motion rather differs from that of conduction s-electrons
Electronic excitations and self-trapping of electrons and holes in
A first-principles study of the electronic properties of a CaSO4 anhydrite structural phase has been performed. A theoretical estimation for the fundamental band gap (p → s transitions) is Eg = 9.6 eV and a proper threshold for p → d transitions is Epd = 10.8 eV. These values agree with the data obtained for a set of CaSO4 doped with Gd3+, Dy3+, Tm3+ and Tb3+ ions using the methods of low-temperature highly sensitive luminescence and thermoactivation spectroscopy. The results are consistent with theoretical predictions of a possible low-temperature self-trapping of oxygen p-holes. The hopping diffusion of hole polarons starts above ~40 K and is accompanied by a ~50–60 K peak of thermally stimulated luminescence of RE3+ ions caused due to the recombination of hole polarons with the electrons localized at RE3+. There is no direct evidence of the self-trapping of heavy d-electrons, however, one can argue that their motion rather differs from that of conduction s-electrons