Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity

Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

Abstract This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels

Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the film

Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges

In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of surface energy, additional edge energy, elastic strain relaxation, and decrease in the atoms attraction to substrate. With the help of well-known model based on the generalization of classical nucleation theory it was shown that elongated islands emerge later than pyramidal clusters. Calculations of QDs surface density and size distribution function for wedge-like clusters with different length to width ratio were performed. The absence of special geometry of islands for which surface density and average size of islands reach points of extremum that was predicted earlier by the model not taking into account energy of edges was revealed when considering the additional contribution of edge formation energy

Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges

In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of surface energy, additional edge energy, elastic strain relaxation, and decrease in the atoms attraction to substrate. With the help of well-known model based on the generalization of classical nucleation theory it was shown that elongated islands emerge later than pyramidal clusters. Calculations of QDs surface density and size distribution function for wedge-like clusters with different length to width ratio were performed. The absence of special geometry of islands for which surface density and average size of islands reach points of extremum that was predicted earlier by the model not taking into account energy of edges was revealed when considering the additional contribution of edge formation energy

Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity

Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured